The article reviews recent advances in micro-pixel light-emitting diode (μLED) technology, focusing on the challenges and solutions for commercializing μLED displays. μLEDs, based on III-V systems, offer advantages over traditional display technologies in terms of lifetime, brightness, contrast ratio, response time, and pixel size. However, their commercialization is hindered by technical issues such as size-dependent degradation mechanisms, low efficiency, and defect formation. Key topics covered include: 1. **Interpretation of μLED Characteristics**: The traditional ABC model is used to interpret μLED behavior, considering non-radiative recombination, radiative recombination, and Auger recombination. 2. **Efficiency Degradation**: Size-dependent degradation mechanisms, including sidewall damage and carrier diffusion, are discussed. Non-radiative recombination at the sidewall is a significant factor in efficiency loss. 3. **Passivation Techniques**: Various passivation methods, such as chemical treatment and atomic layer deposition (ALD), are explored to reduce sidewall damage and improve efficiency. 4. **Red μLEDs**: Challenges and advancements in red μLEDs, including the green gap and carrier diffusion length, are highlighted. 5. **Production Techniques**: Advanced transfer techniques for mass production are reviewed, emphasizing the importance of high transfer rates, reliability, and scalability. 6. **Defect Detection and Repair**: Methods for detecting and repairing defective pixels are discussed to enhance display quality. 7. **Industry Efforts**: The efforts of major display companies in commercializing μLED displays are summarized. The review concludes with insights into the potential realization of next-generation display systems based on μLEDs, emphasizing the need for further research and development to overcome current challenges.The article reviews recent advances in micro-pixel light-emitting diode (μLED) technology, focusing on the challenges and solutions for commercializing μLED displays. μLEDs, based on III-V systems, offer advantages over traditional display technologies in terms of lifetime, brightness, contrast ratio, response time, and pixel size. However, their commercialization is hindered by technical issues such as size-dependent degradation mechanisms, low efficiency, and defect formation. Key topics covered include: 1. **Interpretation of μLED Characteristics**: The traditional ABC model is used to interpret μLED behavior, considering non-radiative recombination, radiative recombination, and Auger recombination. 2. **Efficiency Degradation**: Size-dependent degradation mechanisms, including sidewall damage and carrier diffusion, are discussed. Non-radiative recombination at the sidewall is a significant factor in efficiency loss. 3. **Passivation Techniques**: Various passivation methods, such as chemical treatment and atomic layer deposition (ALD), are explored to reduce sidewall damage and improve efficiency. 4. **Red μLEDs**: Challenges and advancements in red μLEDs, including the green gap and carrier diffusion length, are highlighted. 5. **Production Techniques**: Advanced transfer techniques for mass production are reviewed, emphasizing the importance of high transfer rates, reliability, and scalability. 6. **Defect Detection and Repair**: Methods for detecting and repairing defective pixels are discussed to enhance display quality. 7. **Industry Efforts**: The efforts of major display companies in commercializing μLED displays are summarized. The review concludes with insights into the potential realization of next-generation display systems based on μLEDs, emphasizing the need for further research and development to overcome current challenges.