10 April 2024 | William A. Callahan, Kingsley Egbo, Cheng-Wei Lee, David Ginley, Ryan O'Hayre, Andriy Zakutayev
The paper "Reliable operation of Cr₂O₃:Mg/β-Ga₂O₃ p-n heterojunction diodes at 600 °C" by William A. Callahan et al. investigates the reliability of Cr₂O₃:Mg/β-Ga₂O₃ p-n heterojunction diodes under high-temperature conditions. The authors demonstrate that these diodes can operate reliably at 600 °C, achieving room-temperature on/off ratios greater than 10⁴ at ±5 V and a breakdown voltage of approximately 390 V. They evaluate the diodes' performance after repeated cycles between 25 and 550 °C and a 140-hour thermal soak at 600 °C. The results show that the devices maintain stable reverse bias leakage current but experience increased forward-bias resistance and turn-on voltage. The forward-bias changes are attributed to the accumulation of Mg and MgO at the Cr₂O₃/Ga₂O₃ interface, as confirmed by time-of-flight secondary ion mass spectrometry analysis. The study provides insights into the reliability of ultra-wideband gap (UWBG) semiconductors for harsh environment applications and highlights the need for further reliability assessments.The paper "Reliable operation of Cr₂O₃:Mg/β-Ga₂O₃ p-n heterojunction diodes at 600 °C" by William A. Callahan et al. investigates the reliability of Cr₂O₃:Mg/β-Ga₂O₃ p-n heterojunction diodes under high-temperature conditions. The authors demonstrate that these diodes can operate reliably at 600 °C, achieving room-temperature on/off ratios greater than 10⁴ at ±5 V and a breakdown voltage of approximately 390 V. They evaluate the diodes' performance after repeated cycles between 25 and 550 °C and a 140-hour thermal soak at 600 °C. The results show that the devices maintain stable reverse bias leakage current but experience increased forward-bias resistance and turn-on voltage. The forward-bias changes are attributed to the accumulation of Mg and MgO at the Cr₂O₃/Ga₂O₃ interface, as confirmed by time-of-flight secondary ion mass spectrometry analysis. The study provides insights into the reliability of ultra-wideband gap (UWBG) semiconductors for harsh environment applications and highlights the need for further reliability assessments.