This study reports the fabrication of freestanding single-crystalline antiferroelectric PbZrO₃ membranes with exceptional flexibility and elasticity. The membranes were created using a water-soluble sacrificial layer technique, resulting in a structure with a commensurate/incommensurate modulated microstructure. These membranes exhibit remarkable shape recoverability when bent with a small radius of curvature, up to a maximum bending strain of 3.5%, which is significantly higher than their bulk counterpart. Atomistic simulations reveal that the flexibility arises from the antiferroelectric-ferroelectric phase transition, facilitated by polarization rotation. The membranes demonstrate good antiferroelectric properties and can be used in flexible electronics due to their high flexibility and mechanical stability. The study also highlights the potential of PbZrO₃ membranes for applications in energy storage, actuation, and flexible devices. The results suggest that the unique combination of antiferroelectric and ferroelectric properties in PbZrO₃ enables high flexibility and elasticity, making it a promising material for next-generation flexible electronics. The research provides insights into the mechanisms underlying the flexibility of antiferroelectric oxides and opens new avenues for their application in flexible and multifunctional devices.This study reports the fabrication of freestanding single-crystalline antiferroelectric PbZrO₃ membranes with exceptional flexibility and elasticity. The membranes were created using a water-soluble sacrificial layer technique, resulting in a structure with a commensurate/incommensurate modulated microstructure. These membranes exhibit remarkable shape recoverability when bent with a small radius of curvature, up to a maximum bending strain of 3.5%, which is significantly higher than their bulk counterpart. Atomistic simulations reveal that the flexibility arises from the antiferroelectric-ferroelectric phase transition, facilitated by polarization rotation. The membranes demonstrate good antiferroelectric properties and can be used in flexible electronics due to their high flexibility and mechanical stability. The study also highlights the potential of PbZrO₃ membranes for applications in energy storage, actuation, and flexible devices. The results suggest that the unique combination of antiferroelectric and ferroelectric properties in PbZrO₃ enables high flexibility and elasticity, making it a promising material for next-generation flexible electronics. The research provides insights into the mechanisms underlying the flexibility of antiferroelectric oxides and opens new avenues for their application in flexible and multifunctional devices.