The resistive switching mechanism of TiO₂ thin films grown by atomic-layer deposition (ALD) was investigated using current-voltage measurements and conductive atomic force microscopy (CAFM). The films, with thicknesses between 20 and 57 nm, exhibited resistive switching with a resistance ratio of >10². Both low- and high-resistance states showed linear log current vs. log voltage graphs with a slope of 1 in the low-voltage region. The thermal stability of both states was studied, and atomic force microscopy revealed that resistance switching is closely related to the formation and elimination of conducting spots. The low-resistance state had significantly higher conductivity and density of conducting spots compared to the high-resistance state, resulting in a ~10³ times larger overall conductivity. The area without conducting spots showed different resistance between the two states, attributed to differences in point defect density. The point defects aligned to form conducting filaments in the high-resistance state, which then gathered to form stronger filaments during the transition to the low-resistance state. The resistive switching behavior was observed in both Pt and Al top electrodes, with the Al electrode showing switching only under positive bias. The resistive switching mechanism is believed to be related to the formation and destruction of conducting filaments, with the low-resistance state being more thermally stable. The study highlights the importance of filament formation and modification in resistive switching, with the conductivity ratio of the filaments being approximately 24.3. The results suggest that resistive switching in TiO₂ films is closely related to the formation and modification of conducting filaments by an applied electrical field. The study also shows that the resistance switching of TiO₂ films is closely related to the formation and modification of conducting filaments by an applied electrical field. The results suggest that resistive switching in TiO₂ films is closely related to the formation and modification of conducting filaments by an applied electrical field.The resistive switching mechanism of TiO₂ thin films grown by atomic-layer deposition (ALD) was investigated using current-voltage measurements and conductive atomic force microscopy (CAFM). The films, with thicknesses between 20 and 57 nm, exhibited resistive switching with a resistance ratio of >10². Both low- and high-resistance states showed linear log current vs. log voltage graphs with a slope of 1 in the low-voltage region. The thermal stability of both states was studied, and atomic force microscopy revealed that resistance switching is closely related to the formation and elimination of conducting spots. The low-resistance state had significantly higher conductivity and density of conducting spots compared to the high-resistance state, resulting in a ~10³ times larger overall conductivity. The area without conducting spots showed different resistance between the two states, attributed to differences in point defect density. The point defects aligned to form conducting filaments in the high-resistance state, which then gathered to form stronger filaments during the transition to the low-resistance state. The resistive switching behavior was observed in both Pt and Al top electrodes, with the Al electrode showing switching only under positive bias. The resistive switching mechanism is believed to be related to the formation and destruction of conducting filaments, with the low-resistance state being more thermally stable. The study highlights the importance of filament formation and modification in resistive switching, with the conductivity ratio of the filaments being approximately 24.3. The results suggest that resistive switching in TiO₂ films is closely related to the formation and modification of conducting filaments by an applied electrical field. The study also shows that the resistance switching of TiO₂ films is closely related to the formation and modification of conducting filaments by an applied electrical field. The results suggest that resistive switching in TiO₂ films is closely related to the formation and modification of conducting filaments by an applied electrical field.