Researchers have developed sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) that function as all-semiconducting devices. These GNRFETs exhibit high performance, with an on-state current density of up to ~2000 μA/μm and an I_on/I_off ratio of up to 10^6. They also show carrier mobility of ~200 cm²/Vs and scattering mean free path of ~10 nm. The devices are comparable to small-diameter carbon nanotube FETs in terms of performance, but offer the advantage of being all-semiconducting. The study also highlights the importance of edge quality, acoustic phonon scattering, and defect scattering in determining the performance of GNRFETs. The researchers used a combination of AFM, confocal surface-enhanced Raman spectroscopy, and electrostatic simulations to analyze the properties of the GNRs. They found that the edge scattering mfp increases with GNR width and edge quality. The study also compared GNRFETs with carbon nanotube FETs, showing that sub-10nm GNRs can achieve similar or better performance in terms of current density and I_on/I_off ratio. The researchers also discussed the potential of GNRs for future nano-electronics and suggested further research into the atomic structures of GNR edges and the integration of ultra-thin high-κ dielectrics for better electrostatics and performance. The work was supported by the MARCO MSD Focus Center and Intel.Researchers have developed sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) that function as all-semiconducting devices. These GNRFETs exhibit high performance, with an on-state current density of up to ~2000 μA/μm and an I_on/I_off ratio of up to 10^6. They also show carrier mobility of ~200 cm²/Vs and scattering mean free path of ~10 nm. The devices are comparable to small-diameter carbon nanotube FETs in terms of performance, but offer the advantage of being all-semiconducting. The study also highlights the importance of edge quality, acoustic phonon scattering, and defect scattering in determining the performance of GNRFETs. The researchers used a combination of AFM, confocal surface-enhanced Raman spectroscopy, and electrostatic simulations to analyze the properties of the GNRs. They found that the edge scattering mfp increases with GNR width and edge quality. The study also compared GNRFETs with carbon nanotube FETs, showing that sub-10nm GNRs can achieve similar or better performance in terms of current density and I_on/I_off ratio. The researchers also discussed the potential of GNRs for future nano-electronics and suggested further research into the atomic structures of GNR edges and the integration of ultra-thin high-κ dielectrics for better electrostatics and performance. The work was supported by the MARCO MSD Focus Center and Intel.