This study investigates the electronic properties of ultra-flat graphene on hexagonal boron nitride (hBN) using scanning tunneling microscopy (STM). The research shows that graphene conforms to hBN, as evidenced by Moiré patterns in topographic images. However, unlike previous predictions, this conformation does not lead to a significant band gap due to lattice misalignment. Local spectroscopy measurements reveal that electron-hole charge fluctuations are reduced by two orders of magnitude compared to those on silicon oxide, achieving charge fluctuations similar to suspended graphene. This enables more diverse experiments on Dirac point physics than are possible on freestanding devices. Graphene was first isolated on silicon dioxide, but its electronic properties are not ideal due to high roughness and trapped charges. To reduce impurity-induced charge traps, the substrate must be removed or changed. Suspended graphene offers improved mobility but is delicate and difficult to fabricate. hBN, with a similar atomic structure to graphene but a slightly longer lattice constant, provides mechanical support without interfering with electrical properties. hBN's planar structure results in an ultra-flat surface with minimal charge traps, leading to high mobility and narrow Dirac peak resistance widths. STM measurements show that graphene on hBN has a flat surface with reduced roughness, similar to highly ordered pyrolytic graphite (HOPG). The study also reveals that the graphene lattice on hBN is rotated relative to the hBN lattice, with different orientations in different regions. The Moiré patterns observed are due to the lattice mismatch and rotation. Theoretical calculations confirm that the lattice mismatch and rotation restore sublattice symmetry, resulting in a gapless Dirac spectrum. The study also measures the Fermi velocity of electrons and holes in graphene, finding values of 1.16 × 10^6 m/s for electrons and 0.94 × 10^6 m/s for holes. The charge fluctuations in graphene on hBN are significantly smaller than those on silicon oxide, indicating reduced disorder and charge inhomogeneity. These results suggest that hBN provides a substrate that supports graphene with improved electronic properties, enabling more precise studies of Dirac point physics.This study investigates the electronic properties of ultra-flat graphene on hexagonal boron nitride (hBN) using scanning tunneling microscopy (STM). The research shows that graphene conforms to hBN, as evidenced by Moiré patterns in topographic images. However, unlike previous predictions, this conformation does not lead to a significant band gap due to lattice misalignment. Local spectroscopy measurements reveal that electron-hole charge fluctuations are reduced by two orders of magnitude compared to those on silicon oxide, achieving charge fluctuations similar to suspended graphene. This enables more diverse experiments on Dirac point physics than are possible on freestanding devices. Graphene was first isolated on silicon dioxide, but its electronic properties are not ideal due to high roughness and trapped charges. To reduce impurity-induced charge traps, the substrate must be removed or changed. Suspended graphene offers improved mobility but is delicate and difficult to fabricate. hBN, with a similar atomic structure to graphene but a slightly longer lattice constant, provides mechanical support without interfering with electrical properties. hBN's planar structure results in an ultra-flat surface with minimal charge traps, leading to high mobility and narrow Dirac peak resistance widths. STM measurements show that graphene on hBN has a flat surface with reduced roughness, similar to highly ordered pyrolytic graphite (HOPG). The study also reveals that the graphene lattice on hBN is rotated relative to the hBN lattice, with different orientations in different regions. The Moiré patterns observed are due to the lattice mismatch and rotation. Theoretical calculations confirm that the lattice mismatch and rotation restore sublattice symmetry, resulting in a gapless Dirac spectrum. The study also measures the Fermi velocity of electrons and holes in graphene, finding values of 1.16 × 10^6 m/s for electrons and 0.94 × 10^6 m/s for holes. The charge fluctuations in graphene on hBN are significantly smaller than those on silicon oxide, indicating reduced disorder and charge inhomogeneity. These results suggest that hBN provides a substrate that supports graphene with improved electronic properties, enabling more precise studies of Dirac point physics.