A novel Schottky infrared detector with optically tunable barriers is proposed to overcome the internal photoemission limit, enabling broadband and highly sensitive photodetection. The device uses a graphene-silicon (Gra-Si) Schottky junction for carrier blocking and a narrow bandgap lead telluride (PbTe) for infrared light absorption. The photoresponse of the detector originates from the variation in the Schottky barrier under infrared illumination, allowing it to detect infrared light with photon energies below the barrier height without sacrificing detectivity. The detector exhibits broadband detection from ultraviolet to mid-wave infrared, with a high specific detectivity of 9.83 × 10¹⁰ cm Hz¹/² W⁻¹ at 2,700 nm and an excellent specific detectivity of 7.2 × 10⁹ cm Hz¹/² W⁻¹ at room temperature under blackbody radiation. The device has a low dark current density (<10⁻³ A/cm²), a fast response speed (0.13 ms/0.11 ms), and a room-temperature specific detectivity of up to 7.2 × 10⁹ cm Hz¹/² W⁻¹ under blackbody radiation. The SPBD demonstrates high sensitivity and room temperature operation, making it a promising candidate for uncooled, high-performance silicon-based infrared sensors. The device's performance is comparable to other graphene-based photodetectors, with a responsivity of 50 mA/W and an EQE of 2.5% in the SWIR region at room temperature. The SPBD also shows notable long-term stability and is capable of detecting a wide range of wavelengths, including ultraviolet, visible, near-infrared, short-wave infrared, and middle-wave infrared. The device's photoresponse is measured using a 5 × 5 array, demonstrating its potential for imaging applications. The SPBD's performance is further validated by its blackbody sensitivity, with a specific detectivity of 7.2 × 10⁹ cm Hz¹/² W⁻¹ and a noise voltage of 6.47 × 10⁻¹⁴ V²/Hz at 1 kHz. The device's temporal response is characterized, with a rising time of 0.13 ms and a falling time of 0.11 ms. The SPBD's performance is promising for future infrared detection applications.A novel Schottky infrared detector with optically tunable barriers is proposed to overcome the internal photoemission limit, enabling broadband and highly sensitive photodetection. The device uses a graphene-silicon (Gra-Si) Schottky junction for carrier blocking and a narrow bandgap lead telluride (PbTe) for infrared light absorption. The photoresponse of the detector originates from the variation in the Schottky barrier under infrared illumination, allowing it to detect infrared light with photon energies below the barrier height without sacrificing detectivity. The detector exhibits broadband detection from ultraviolet to mid-wave infrared, with a high specific detectivity of 9.83 × 10¹⁰ cm Hz¹/² W⁻¹ at 2,700 nm and an excellent specific detectivity of 7.2 × 10⁹ cm Hz¹/² W⁻¹ at room temperature under blackbody radiation. The device has a low dark current density (<10⁻³ A/cm²), a fast response speed (0.13 ms/0.11 ms), and a room-temperature specific detectivity of up to 7.2 × 10⁹ cm Hz¹/² W⁻¹ under blackbody radiation. The SPBD demonstrates high sensitivity and room temperature operation, making it a promising candidate for uncooled, high-performance silicon-based infrared sensors. The device's performance is comparable to other graphene-based photodetectors, with a responsivity of 50 mA/W and an EQE of 2.5% in the SWIR region at room temperature. The SPBD also shows notable long-term stability and is capable of detecting a wide range of wavelengths, including ultraviolet, visible, near-infrared, short-wave infrared, and middle-wave infrared. The device's photoresponse is measured using a 5 × 5 array, demonstrating its potential for imaging applications. The SPBD's performance is further validated by its blackbody sensitivity, with a specific detectivity of 7.2 × 10⁹ cm Hz¹/² W⁻¹ and a noise voltage of 6.47 × 10⁻¹⁴ V²/Hz at 1 kHz. The device's temporal response is characterized, with a rising time of 0.13 ms and a falling time of 0.11 ms. The SPBD's performance is promising for future infrared detection applications.