This paper presents a novel all-inorganic Schottky solar cell based on colloidal nanocrystal (NC) films. The device consists of a PbSe NC film deposited via layer-by-layer dip coating onto patterned indium tin oxide (ITO) coated glass, followed by evaporation of a top metal contact. The NC film has a high external quantum efficiency (EQE) of 55–65% in the visible and up to 25% in the infrared region, with a spectrally corrected AM1.5G power conversion efficiency of 2.1%. The device produces a large short-circuit photocurrent (Jsc) of 24.5 mA cm⁻², with an open-circuit voltage (Voc) of 239 mV and a fill factor (FF) of 0.41. The high Jsc is attributed to a Schottky junction at the negative electrode, which separates photogenerated carriers efficiently. The device's structure and performance are analyzed using current-voltage (J-V) characteristics, EQE spectra, and band diagrams. The Schottky junction is supported by the linear dependence of Voc on the NC bandgap and the decrease in Voc with increasing work function of the top metal contact. Mott-Schottky analysis confirms the presence of a Schottky junction, with a built-in potential of 0.2 V for the thick NC film. The device's performance is also consistent with the polarity of the photocurrent and the C-V analysis. The device's efficiency is limited by the unsintered, glassy microstructure of the NC films and the retention of quantum confinement effects despite strong inter-NC carrier transport. The EQE of the device resembles the NC absorption spectra in the visible and near-infrared regions, with a peak at 55–65% below 800 nm. The internal quantum efficiency (IQE) is estimated to be about 80% in this part of the spectrum. The device's performance is compared to other nanostructured solar cells, including organic and dye-sensitized devices, and is found to be among the most efficient. The study also highlights the potential for improving cell efficiency by engineering the surface of the NCs to achieve longer carrier diffusion lengths and higher photovoltages through surface state passivation and prevention of Fermi level pinning. However, the device has some drawbacks, including a Schottky junction at the back contact, which limits light absorption and complicates the search for multiple exciton generation (MEG) photocurrent. The device also experiences degradation when exposed to air, likely due to surface oxidation of the NC film. Future work aims to improve the device's stability and efficiency.This paper presents a novel all-inorganic Schottky solar cell based on colloidal nanocrystal (NC) films. The device consists of a PbSe NC film deposited via layer-by-layer dip coating onto patterned indium tin oxide (ITO) coated glass, followed by evaporation of a top metal contact. The NC film has a high external quantum efficiency (EQE) of 55–65% in the visible and up to 25% in the infrared region, with a spectrally corrected AM1.5G power conversion efficiency of 2.1%. The device produces a large short-circuit photocurrent (Jsc) of 24.5 mA cm⁻², with an open-circuit voltage (Voc) of 239 mV and a fill factor (FF) of 0.41. The high Jsc is attributed to a Schottky junction at the negative electrode, which separates photogenerated carriers efficiently. The device's structure and performance are analyzed using current-voltage (J-V) characteristics, EQE spectra, and band diagrams. The Schottky junction is supported by the linear dependence of Voc on the NC bandgap and the decrease in Voc with increasing work function of the top metal contact. Mott-Schottky analysis confirms the presence of a Schottky junction, with a built-in potential of 0.2 V for the thick NC film. The device's performance is also consistent with the polarity of the photocurrent and the C-V analysis. The device's efficiency is limited by the unsintered, glassy microstructure of the NC films and the retention of quantum confinement effects despite strong inter-NC carrier transport. The EQE of the device resembles the NC absorption spectra in the visible and near-infrared regions, with a peak at 55–65% below 800 nm. The internal quantum efficiency (IQE) is estimated to be about 80% in this part of the spectrum. The device's performance is compared to other nanostructured solar cells, including organic and dye-sensitized devices, and is found to be among the most efficient. The study also highlights the potential for improving cell efficiency by engineering the surface of the NCs to achieve longer carrier diffusion lengths and higher photovoltages through surface state passivation and prevention of Fermi level pinning. However, the device has some drawbacks, including a Schottky junction at the back contact, which limits light absorption and complicates the search for multiple exciton generation (MEG) photocurrent. The device also experiences degradation when exposed to air, likely due to surface oxidation of the NC film. Future work aims to improve the device's stability and efficiency.