This paper describes a novel all-inorganic metal/NC/metal sandwich photovoltaic (PV) cell that achieves an exceptionally high short-circuit photocurrent (>21 mA cm⁻²) through a Schottky junction at the negative electrode. The cell consists of a PbSe nanocrystal (NC) film deposited via layer-by-layer (LbL) dip coating, resulting in an external quantum efficiency (EQE) of 55–65% in the visible and up to 25% in the infrared region. The device exhibits a spectrally corrected AM1.5G power conversion efficiency of 2.1%. The fabrication process involves depositing monodisperse, spheroidal PbSe NCs onto patterned indium tin oxide (ITO) coated glass, followed by evaporation of a top metal contact. The NCs pack randomly in the films, showing p-type conductivity under illumination. The device's performance is characterized by current–voltage (I-V) characteristics, EQE spectra, and a proposed band diagram. The Schottky barrier at the metal contact is confirmed through Mott-Schottky analysis, which shows a built-in potential of 0.2 V and a depletion width of 150 nm. The study also discusses the limitations and future improvements, such as the need for a front Schottky junction to enhance light absorption and the challenge of preventing surface oxidation.This paper describes a novel all-inorganic metal/NC/metal sandwich photovoltaic (PV) cell that achieves an exceptionally high short-circuit photocurrent (>21 mA cm⁻²) through a Schottky junction at the negative electrode. The cell consists of a PbSe nanocrystal (NC) film deposited via layer-by-layer (LbL) dip coating, resulting in an external quantum efficiency (EQE) of 55–65% in the visible and up to 25% in the infrared region. The device exhibits a spectrally corrected AM1.5G power conversion efficiency of 2.1%. The fabrication process involves depositing monodisperse, spheroidal PbSe NCs onto patterned indium tin oxide (ITO) coated glass, followed by evaporation of a top metal contact. The NCs pack randomly in the films, showing p-type conductivity under illumination. The device's performance is characterized by current–voltage (I-V) characteristics, EQE spectra, and a proposed band diagram. The Schottky barrier at the metal contact is confirmed through Mott-Schottky analysis, which shows a built-in potential of 0.2 V and a depletion width of 150 nm. The study also discusses the limitations and future improvements, such as the need for a front Schottky junction to enhance light absorption and the challenge of preventing surface oxidation.