This study investigates the transport phenomena and recombination mechanisms in thin film $ Sb_{2}S_{3} $ solar cells to enhance their performance and efficiency. The research aims to develop an accurate analytical model that can explain the low efficiency of $ Sb_{2}S_{3} $ solar cells, which is primarily attributed to interface-induced recombination losses due to defects and misaligned energy levels. The model considers various recombination mechanisms, including non-radiative recombination, $ Sb_{2}S_{3}/CdS $ interface recombination, Auger, SRH, and tunneling-enhanced recombination, and their combined impact on solar cell performance. The model is validated against experimental data, showing good agreement. The study analyzes the effects of parameters such as thickness, doping, electronic affinity, and bandgap on solar cell performance. It also examines the impact of bulk traps in CdS and $ Sb_{2}S_{3} $ on the electrical outputs of the solar cell. A deep insight into the effect of interfacial traps on solar cell figures of merit is gained by analyzing their relation with minority carrier lifetime, diffusion length, and surface recombination velocity. The research findings indicate that the primary contributors to $ Sb_{2}S_{3} $ degradation are interfacial traps and series resistance. Achieving optimal band alignment by fine-tuning the electron affinity of CdS to create a Spike-like conformation is crucial for enhancing the immunity of the device against interfacial traps. The optimized solar cell configuration (Glass/ITO/CdS/$ Sb_{2}S_{3} $/Au) demonstrates remarkable performance, including a high short-circuit current ($ J_{sc} $) of 47.9 mA/cm², an open-circuit voltage ($ V_{oc} $) of 1.16 V, a fill factor (FF) of 54%, and a notable improvement in conversion efficiency by approximately 30% compared to conventional solar cells. The optimized $ Sb_{2}S_{3} $ solar cell also exhibits enhanced reliability in mitigating interfacial traps at the CdS/$ Sb_{2}S_{3} $ junction, attributed to precise control of band alignment and fine-tuning of influencing parameters. The study highlights the importance of understanding and optimizing transport mechanisms and recombination processes to improve the performance and efficiency of $ Sb_{2}S_{3} $ solar cells.This study investigates the transport phenomena and recombination mechanisms in thin film $ Sb_{2}S_{3} $ solar cells to enhance their performance and efficiency. The research aims to develop an accurate analytical model that can explain the low efficiency of $ Sb_{2}S_{3} $ solar cells, which is primarily attributed to interface-induced recombination losses due to defects and misaligned energy levels. The model considers various recombination mechanisms, including non-radiative recombination, $ Sb_{2}S_{3}/CdS $ interface recombination, Auger, SRH, and tunneling-enhanced recombination, and their combined impact on solar cell performance. The model is validated against experimental data, showing good agreement. The study analyzes the effects of parameters such as thickness, doping, electronic affinity, and bandgap on solar cell performance. It also examines the impact of bulk traps in CdS and $ Sb_{2}S_{3} $ on the electrical outputs of the solar cell. A deep insight into the effect of interfacial traps on solar cell figures of merit is gained by analyzing their relation with minority carrier lifetime, diffusion length, and surface recombination velocity. The research findings indicate that the primary contributors to $ Sb_{2}S_{3} $ degradation are interfacial traps and series resistance. Achieving optimal band alignment by fine-tuning the electron affinity of CdS to create a Spike-like conformation is crucial for enhancing the immunity of the device against interfacial traps. The optimized solar cell configuration (Glass/ITO/CdS/$ Sb_{2}S_{3} $/Au) demonstrates remarkable performance, including a high short-circuit current ($ J_{sc} $) of 47.9 mA/cm², an open-circuit voltage ($ V_{oc} $) of 1.16 V, a fill factor (FF) of 54%, and a notable improvement in conversion efficiency by approximately 30% compared to conventional solar cells. The optimized $ Sb_{2}S_{3} $ solar cell also exhibits enhanced reliability in mitigating interfacial traps at the CdS/$ Sb_{2}S_{3} $ junction, attributed to precise control of band alignment and fine-tuning of influencing parameters. The study highlights the importance of understanding and optimizing transport mechanisms and recombination processes to improve the performance and efficiency of $ Sb_{2}S_{3} $ solar cells.