The chapter discusses the selection of alternative metals for advanced interconnects in CMOS circuits, emphasizing the importance of interconnect resistance and reliability. As transistor scaling slows, interconnect scaling becomes the primary driver for circuit miniaturization, and current Cu dual-damascene metallization is becoming increasingly challenging at critical dimensions below 10 nm. The selection of alternative metals involves multiple criteria, including resistivity at reduced dimensions, reliability, thermal aspects, and sustainability. The tutorial introduces the basic criteria for benchmarking and selecting alternative metals, covering materials close to manufacturing introduction, current research, and future directions. It highlights the need for barrier and liner layers in Cu metallization, which can occupy a significant volume fraction at small dimensions, leading to higher resistance. The tutorial also addresses the reliability aspects, such as dielectric breakdown and electromigration, and discusses the downselection of alternative metals, including elemental metals, graphene, binary intermetallics, and ternary compounds. The selection process is multifaceted and involves a multistage approach, including ab initio simulations, thin film and nanowire experiments, and process integration considerations. The tutorial concludes with a discussion on the sustainability of alternative metals and a life cycle assessment scheme.The chapter discusses the selection of alternative metals for advanced interconnects in CMOS circuits, emphasizing the importance of interconnect resistance and reliability. As transistor scaling slows, interconnect scaling becomes the primary driver for circuit miniaturization, and current Cu dual-damascene metallization is becoming increasingly challenging at critical dimensions below 10 nm. The selection of alternative metals involves multiple criteria, including resistivity at reduced dimensions, reliability, thermal aspects, and sustainability. The tutorial introduces the basic criteria for benchmarking and selecting alternative metals, covering materials close to manufacturing introduction, current research, and future directions. It highlights the need for barrier and liner layers in Cu metallization, which can occupy a significant volume fraction at small dimensions, leading to higher resistance. The tutorial also addresses the reliability aspects, such as dielectric breakdown and electromigration, and discusses the downselection of alternative metals, including elemental metals, graphene, binary intermetallics, and ternary compounds. The selection process is multifaceted and involves a multistage approach, including ab initio simulations, thin film and nanowire experiments, and process integration considerations. The tutorial concludes with a discussion on the sustainability of alternative metals and a life cycle assessment scheme.