This review article provides a comprehensive overview of black phosphorus, a layered semiconductor with significant potential in electronic and optoelectronic applications. Black phosphorus, a rare form of phosphorus, was first synthesized in 1914 through high-pressure and high-temperature conditions. Unlike other forms of phosphorus, black phosphorus is thermodynamically stable and exhibits unique properties due to its van der Waals structure. The material can be reduced to a single atomic layer, known as phosphorene, which shows distinct physical and transport properties compared to its bulk counterpart. The article traces the 100-year research history of black phosphorus, from its synthesis methods to material properties and device applications. It highlights the synthesis techniques, including the Bridgman method, bismuth-flux method, and mineralizer route, and discusses the crystal structure and anisotropic transport properties. The electrical conduction and carrier mobility of black phosphorus are detailed, with measurements showing p-type conductivity and high mobility at room temperature. The article also explores the pressure-induced superconductivity observed in black phosphorus under high pressure. Device applications of black phosphorus are discussed, focusing on field-effect transistors (FETs) and optoelectronic devices. FETs have demonstrated improved performance over traditional 2D materials like transition metal dichalcogenides (TMDs), with enhanced drain current and carrier mobility. Optoelectronic devices, such as p-n diodes and phototransistors, have shown promising results in photodetection and solar cell applications due to their direct bandgap and high mobility. The article concludes by discussing the future directions for research, including the isolation and passivation of single-layer phosphorene, and the hetero-integration of various 2D crystals to create more advanced devices. The unique properties and potential of black phosphorus make it a promising material for future electronic and optoelectronic applications.This review article provides a comprehensive overview of black phosphorus, a layered semiconductor with significant potential in electronic and optoelectronic applications. Black phosphorus, a rare form of phosphorus, was first synthesized in 1914 through high-pressure and high-temperature conditions. Unlike other forms of phosphorus, black phosphorus is thermodynamically stable and exhibits unique properties due to its van der Waals structure. The material can be reduced to a single atomic layer, known as phosphorene, which shows distinct physical and transport properties compared to its bulk counterpart. The article traces the 100-year research history of black phosphorus, from its synthesis methods to material properties and device applications. It highlights the synthesis techniques, including the Bridgman method, bismuth-flux method, and mineralizer route, and discusses the crystal structure and anisotropic transport properties. The electrical conduction and carrier mobility of black phosphorus are detailed, with measurements showing p-type conductivity and high mobility at room temperature. The article also explores the pressure-induced superconductivity observed in black phosphorus under high pressure. Device applications of black phosphorus are discussed, focusing on field-effect transistors (FETs) and optoelectronic devices. FETs have demonstrated improved performance over traditional 2D materials like transition metal dichalcogenides (TMDs), with enhanced drain current and carrier mobility. Optoelectronic devices, such as p-n diodes and phototransistors, have shown promising results in photodetection and solar cell applications due to their direct bandgap and high mobility. The article concludes by discussing the future directions for research, including the isolation and passivation of single-layer phosphorene, and the hetero-integration of various 2D crystals to create more advanced devices. The unique properties and potential of black phosphorus make it a promising material for future electronic and optoelectronic applications.