The study investigates the creation and properties of moiré-trapped valley excitons in MoSe₂/WSe₂ heterobilayers. Moiré patterns, formed by vertically stacking two layered materials with a twist and/or lattice constant difference, can manipulate electronic properties in two-dimensional (2D) materials. The authors report experimental evidence of interlayer valley excitons trapped in a moiré potential, observed through narrow linewidth photoluminescence and g-factors that match those of free interlayer excitons. The g-factors are consistent with valley pairing configurations and exhibit strong circular polarization, indicating the preservation of three-fold rotational symmetry. The findings suggest that the trapping potential is smooth and three-fold rotationally symmetric, supporting the hypothesis that the moiré potential is responsible for the trapped excitons. The study also discusses the implications of these findings for 2D moiré optics and the potential for exploring quantum photonics applications.The study investigates the creation and properties of moiré-trapped valley excitons in MoSe₂/WSe₂ heterobilayers. Moiré patterns, formed by vertically stacking two layered materials with a twist and/or lattice constant difference, can manipulate electronic properties in two-dimensional (2D) materials. The authors report experimental evidence of interlayer valley excitons trapped in a moiré potential, observed through narrow linewidth photoluminescence and g-factors that match those of free interlayer excitons. The g-factors are consistent with valley pairing configurations and exhibit strong circular polarization, indicating the preservation of three-fold rotational symmetry. The findings suggest that the trapping potential is smooth and three-fold rotationally symmetric, supporting the hypothesis that the moiré potential is responsible for the trapped excitons. The study also discusses the implications of these findings for 2D moiré optics and the potential for exploring quantum photonics applications.