Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers

Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers

| Kyle L. Seyler*1, Pasqual Rivera*1, Hongyi Yu2, Nathan P. Wilson1, Essance L. Ray1, David Mandrus3,4,5, Jiaqiang Yan3,4, Wang Yao*2, Xiaodong Xu*1,6
This study reports the experimental observation of interlayer valley excitons trapped in a moiré potential in MoSe₂/WSe₂ heterobilayers. The researchers observed photoluminescence with significantly narrower linewidths (≈100 μeV) and distinct g-factors (-15.9 and 6.7) in samples with twist angles near 60° and 0°, respectively. These g-factors match those of free interlayer excitons, indicating the preservation of valley-contrasting properties. At a twist angle near 20°, the emitters become dimmer but retain the same g-factor as the 60° sample, consistent with Umklapp recombination near the commensurate 21.8° twist angle. The emitters exhibit strong circular polarization, implying the preservation of three-fold rotational symmetry by the trapping potential. The results suggest that the interlayer excitons are trapped in a smooth moiré potential with inherited valley-contrasting physics. The findings open opportunities for 2D moiré optics with twist angle as a unique control knob. The study also highlights the unique properties of moiré-trapped interlayer excitons, including their valley polarization, g-factors, and optical selection rules, which are distinct from those of defect-localized excitons in monolayer materials. The results demonstrate that the trapping potential must be smooth and three-fold rotationally symmetric to allow the inheritance of valley properties from the heterobilayer bulk. The study provides experimental evidence of interlayer excitons trapped in a moiré superlattice potential, with implications for quantum photonics, including entangled photon sources, giant spin-orbit coupling, and topological excitons.This study reports the experimental observation of interlayer valley excitons trapped in a moiré potential in MoSe₂/WSe₂ heterobilayers. The researchers observed photoluminescence with significantly narrower linewidths (≈100 μeV) and distinct g-factors (-15.9 and 6.7) in samples with twist angles near 60° and 0°, respectively. These g-factors match those of free interlayer excitons, indicating the preservation of valley-contrasting properties. At a twist angle near 20°, the emitters become dimmer but retain the same g-factor as the 60° sample, consistent with Umklapp recombination near the commensurate 21.8° twist angle. The emitters exhibit strong circular polarization, implying the preservation of three-fold rotational symmetry by the trapping potential. The results suggest that the interlayer excitons are trapped in a smooth moiré potential with inherited valley-contrasting physics. The findings open opportunities for 2D moiré optics with twist angle as a unique control knob. The study also highlights the unique properties of moiré-trapped interlayer excitons, including their valley polarization, g-factors, and optical selection rules, which are distinct from those of defect-localized excitons in monolayer materials. The results demonstrate that the trapping potential must be smooth and three-fold rotationally symmetric to allow the inheritance of valley properties from the heterobilayer bulk. The study provides experimental evidence of interlayer excitons trapped in a moiré superlattice potential, with implications for quantum photonics, including entangled photon sources, giant spin-orbit coupling, and topological excitons.
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