This study reports the first experimental realization of a silicene field-effect transistor (FET) operating at room temperature. Silicene, a silicon analogue of graphene, has a buckled honeycomb lattice and a Dirac band structure, making it potentially suitable for nanoelectronic devices. However, its air instability has hindered its practical application. The researchers developed a growth-transfer-fabrication process called Silicene Encapsulated Delamination with Native Electrodes (SEDNE) to overcome this challenge. This process involves epitaxial growth of silicene on Ag(111), encapsulation with Al₂O₃, and delamination transfer using native Ag electrodes. The SEDNE process preserves the silicene during transfer and device fabrication, allowing for the fabrication of high-performance FETs. The measured mobility of the silicene FETs was approximately 100 cm²/V-s, attributed to acoustic phonon limited transport and grain boundary scattering. The results confirm theoretical predictions of ambipolar Dirac charge transport in silicene and suggest that silicene could be a viable 2D nanomaterial for future semiconductor technology, given its compatibility with existing silicon-based infrastructure.This study reports the first experimental realization of a silicene field-effect transistor (FET) operating at room temperature. Silicene, a silicon analogue of graphene, has a buckled honeycomb lattice and a Dirac band structure, making it potentially suitable for nanoelectronic devices. However, its air instability has hindered its practical application. The researchers developed a growth-transfer-fabrication process called Silicene Encapsulated Delamination with Native Electrodes (SEDNE) to overcome this challenge. This process involves epitaxial growth of silicene on Ag(111), encapsulation with Al₂O₃, and delamination transfer using native Ag electrodes. The SEDNE process preserves the silicene during transfer and device fabrication, allowing for the fabrication of high-performance FETs. The measured mobility of the silicene FETs was approximately 100 cm²/V-s, attributed to acoustic phonon limited transport and grain boundary scattering. The results confirm theoretical predictions of ambipolar Dirac charge transport in silicene and suggest that silicene could be a viable 2D nanomaterial for future semiconductor technology, given its compatibility with existing silicon-based infrastructure.