19 Nov 2004 | J.M. Elzerman, R. Hanson, L.H. Willems van Beveren, B. Witkamp, L.M.K. Vandersypen, and L.P. Kouwenhoven
This paper presents a method for the single-shot read-out of an individual electron spin in a semiconductor quantum dot. The researchers demonstrate an electrical measurement technique that converts the spin state of a single electron into a measurable charge state using a quantum point contact (QPC). The spin measurement visibility is found to be approximately 65%. The method relies on spin-to-charge conversion, where the spin state of an electron determines whether it remains on the quantum dot or tunnels out. The spin state is then inferred from the resulting charge state measured by the QPC.
The experiment involves a two-level pulse technique, where a single electron is injected into the quantum dot, and its spin state is determined by observing whether it tunnels out during a read-out stage. The spin state is determined by the change in the QPC current, which is sensitive to the charge state of the dot. The researchers also measure the spin relaxation time, $ T_1 $, which is found to be up to 0.85 ms at 8 Tesla, indicating the potential of electron spins as quantum information carriers.
The quantum dot is tuned to a specific configuration to ensure that the spin state is accurately measured. The measurement fidelity is characterized by two parameters, $ \alpha $ and $ \beta $, which represent the probabilities of false positives and false negatives, respectively. The measurement visibility, defined as $ 1 - \alpha - \beta $, is found to be 65%, indicating the accuracy of the spin read-out.
The results demonstrate the feasibility of single-shot spin read-out and the long spin relaxation times, which are encouraging for the use of electron spins in quantum information processing. The study highlights the potential of quantum dots as quantum bits and the importance of improving the measurement visibility through lower electron temperatures and faster charge measurements. The work is supported by various funding sources and acknowledges the contributions of several researchers and institutions.This paper presents a method for the single-shot read-out of an individual electron spin in a semiconductor quantum dot. The researchers demonstrate an electrical measurement technique that converts the spin state of a single electron into a measurable charge state using a quantum point contact (QPC). The spin measurement visibility is found to be approximately 65%. The method relies on spin-to-charge conversion, where the spin state of an electron determines whether it remains on the quantum dot or tunnels out. The spin state is then inferred from the resulting charge state measured by the QPC.
The experiment involves a two-level pulse technique, where a single electron is injected into the quantum dot, and its spin state is determined by observing whether it tunnels out during a read-out stage. The spin state is determined by the change in the QPC current, which is sensitive to the charge state of the dot. The researchers also measure the spin relaxation time, $ T_1 $, which is found to be up to 0.85 ms at 8 Tesla, indicating the potential of electron spins as quantum information carriers.
The quantum dot is tuned to a specific configuration to ensure that the spin state is accurately measured. The measurement fidelity is characterized by two parameters, $ \alpha $ and $ \beta $, which represent the probabilities of false positives and false negatives, respectively. The measurement visibility, defined as $ 1 - \alpha - \beta $, is found to be 65%, indicating the accuracy of the spin read-out.
The results demonstrate the feasibility of single-shot spin read-out and the long spin relaxation times, which are encouraging for the use of electron spins in quantum information processing. The study highlights the potential of quantum dots as quantum bits and the importance of improving the measurement visibility through lower electron temperatures and faster charge measurements. The work is supported by various funding sources and acknowledges the contributions of several researchers and institutions.