Solution-processed hybrid perovskite photodetectors with high detectivity

Solution-processed hybrid perovskite photodetectors with high detectivity

Received 10 Jul 2014 | Accepted 29 Sep 2014 | Published 20 Nov 2014 | Letian Dou1,2,* Yang (Micheal) Yang1,* Jingbi You1,* Ziruo Hong1, Wei-Hsuan Chang1,2, Gang Li1 & Yang Yang1,2
This study demonstrates the development of a novel solution-processed hybrid perovskite photodetector with high detectivity. The photodetector, operating at room temperature, exhibits a large detectivity of up to \(10^{14}\) Jones, a linear dynamic range over 100 dB, and a fast photoresponse with a 3-dB bandwidth of up to 3 MHz. These performance metrics are comparable to or better than those of traditional inorganic semiconductor-based photodetectors and other organic, quantum dot, and hybrid photodetectors. The device structure includes an organic-inorganic hybrid perovskite layer sandwiched between PEDOT:PSS (hole-transporting material) and PCBM (electron-transporting material). The addition of a hole-blocking layer, such as BCP or PFN, significantly reduces dark current density, enhancing the detectivity. The hybrid perovskite material's properties, including high external quantum efficiency, low defect density, and high absorption coefficient, contribute to its superior performance. The study also highlights the importance of device interface design in achieving high-performance photodetectors, suggesting that perovskite materials are promising candidates for low-cost, high-performance photodetector applications.This study demonstrates the development of a novel solution-processed hybrid perovskite photodetector with high detectivity. The photodetector, operating at room temperature, exhibits a large detectivity of up to \(10^{14}\) Jones, a linear dynamic range over 100 dB, and a fast photoresponse with a 3-dB bandwidth of up to 3 MHz. These performance metrics are comparable to or better than those of traditional inorganic semiconductor-based photodetectors and other organic, quantum dot, and hybrid photodetectors. The device structure includes an organic-inorganic hybrid perovskite layer sandwiched between PEDOT:PSS (hole-transporting material) and PCBM (electron-transporting material). The addition of a hole-blocking layer, such as BCP or PFN, significantly reduces dark current density, enhancing the detectivity. The hybrid perovskite material's properties, including high external quantum efficiency, low defect density, and high absorption coefficient, contribute to its superior performance. The study also highlights the importance of device interface design in achieving high-performance photodetectors, suggesting that perovskite materials are promising candidates for low-cost, high-performance photodetector applications.
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