February 4, 2008 | Davy Graf, Françoise Molitor, Klaus Ensslin, Christoph Stampfer, Alain Jungen, Christofer Hierold, Ludger Wirtz
This paper presents Raman spectroscopy measurements on single- and few-layer graphene flakes using a scanning confocal approach to achieve spatial resolution. The study compares Raman images with scanning force micrographs to distinguish single-layer graphene from double- and few-layer graphene based on the width of the D' line. Single-layer graphene exhibits a single peak, while double- and few-layer graphene show multiple peaks. These findings are explained using a double-resonant Raman model based on ab-initio calculations of the electronic structure and phonon dispersion. The D line intensity is investigated, and no defects are found within the flake. A finite D line response from the edges is attributed to either defects or the breakdown of translational symmetry.
The study highlights the interest in graphite, revived by the discovery of fullerenes and carbon nanotubes. Single- and few-layer graphene have recently been transferred to a substrate, revealing a highly tunable two-dimensional electron/hole gas of relativistic Dirac Fermions. Few-layer graphene is a promising candidate for studying physics at the crossover from bulk to two-dimensional systems. Double-resonant Raman scattering is an effective tool to probe the lifting of degeneracy in few-layer graphene.
Raman mapping of single- and few-layer graphene on a silicon oxide substrate shows a lateral resolution of 400 nm, allowing the detection of different layers. The integrated G line signal is correlated with the thickness of the flake and shifts in frequency for double- and single-layer graphene compared to bulk graphite. The peak width of the D' line shows a strong contrast between single- and few-layer graphene, indicating a sensitive method to detect single-layer graphene. The D band is related to elastic backscattering, and the map of the integrated D line signal shows that the inner part of the flake is defect-free, while edges and steps act as scatterers.
The splitting of the D' line is explained within the double-resonant Raman model, showing quantitative differences between theory and experiment. The model predicts a smaller splitting of the peaks compared to experimental results. The study also discusses the electronic and vibrational properties of graphite, dominated by the sp² nature of the covalent bonds. Raman spectroscopy can be used to count layers and distinguish between single and double-layer graphene. The results demonstrate the effectiveness of Raman mapping in studying the structural quality of graphene flakes.This paper presents Raman spectroscopy measurements on single- and few-layer graphene flakes using a scanning confocal approach to achieve spatial resolution. The study compares Raman images with scanning force micrographs to distinguish single-layer graphene from double- and few-layer graphene based on the width of the D' line. Single-layer graphene exhibits a single peak, while double- and few-layer graphene show multiple peaks. These findings are explained using a double-resonant Raman model based on ab-initio calculations of the electronic structure and phonon dispersion. The D line intensity is investigated, and no defects are found within the flake. A finite D line response from the edges is attributed to either defects or the breakdown of translational symmetry.
The study highlights the interest in graphite, revived by the discovery of fullerenes and carbon nanotubes. Single- and few-layer graphene have recently been transferred to a substrate, revealing a highly tunable two-dimensional electron/hole gas of relativistic Dirac Fermions. Few-layer graphene is a promising candidate for studying physics at the crossover from bulk to two-dimensional systems. Double-resonant Raman scattering is an effective tool to probe the lifting of degeneracy in few-layer graphene.
Raman mapping of single- and few-layer graphene on a silicon oxide substrate shows a lateral resolution of 400 nm, allowing the detection of different layers. The integrated G line signal is correlated with the thickness of the flake and shifts in frequency for double- and single-layer graphene compared to bulk graphite. The peak width of the D' line shows a strong contrast between single- and few-layer graphene, indicating a sensitive method to detect single-layer graphene. The D band is related to elastic backscattering, and the map of the integrated D line signal shows that the inner part of the flake is defect-free, while edges and steps act as scatterers.
The splitting of the D' line is explained within the double-resonant Raman model, showing quantitative differences between theory and experiment. The model predicts a smaller splitting of the peaks compared to experimental results. The study also discusses the electronic and vibrational properties of graphite, dominated by the sp² nature of the covalent bonds. Raman spectroscopy can be used to count layers and distinguish between single and double-layer graphene. The results demonstrate the effectiveness of Raman mapping in studying the structural quality of graphene flakes.