The paper reports a significant giant spin Hall effect (SHE) in β-Ta, which generates strong spin currents capable of inducing efficient spin-transfer-torque (ST) switching of ferromagnets. The SHE is quantified using three independent methods, demonstrating its effectiveness in both out-of-plane and in-plane magnetized layers. A three-terminal device is implemented, utilizing a low impedance Ta-ferromagnet bilayer to switch a nanomagnet with a high-impedance magnetic tunnel junction for read-out. This design offers improved efficiency, reliability, and signal levels compared to conventional two-terminal magnetic tunnel junctions, making it a promising approach for magnetic memory and non-volatile spin logic applications. The study highlights the potential of β-Ta as a material for controlling magnetic devices with superior performance and ease of fabrication.The paper reports a significant giant spin Hall effect (SHE) in β-Ta, which generates strong spin currents capable of inducing efficient spin-transfer-torque (ST) switching of ferromagnets. The SHE is quantified using three independent methods, demonstrating its effectiveness in both out-of-plane and in-plane magnetized layers. A three-terminal device is implemented, utilizing a low impedance Ta-ferromagnet bilayer to switch a nanomagnet with a high-impedance magnetic tunnel junction for read-out. This design offers improved efficiency, reliability, and signal levels compared to conventional two-terminal magnetic tunnel junctions, making it a promising approach for magnetic memory and non-volatile spin logic applications. The study highlights the potential of β-Ta as a material for controlling magnetic devices with superior performance and ease of fabrication.