Researchers report a giant spin Hall effect (SHE) in β-Ta, which generates intense spin currents capable of efficiently switching ferromagnets, offering a new method for controlling magnetic devices. The study quantifies the SHE using three methods and demonstrates spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. A three-terminal device utilizing a low-impedance Ta-ferromagnet bilayer for switching and a high-impedance magnetic tunnel junction for read-out is implemented. The device's efficiency, reliability, and simplicity suggest it can overcome current limitations in magnetic memory and non-volatile spin logic technologies. Spin-polarized currents can apply torques to magnetic moments via spin angular momentum transfer, enabling manipulation of nanoscale devices with lower currents than magnetic-field-based control. Previously, spin currents were generated by passing electron currents through magnetic polarizing layers, leading to two-terminal magnetic tunnel junctions (MTJs) as the most promising device geometry. However, MTJs face challenges in reliability and manufacturing. The spin Hall effect (SHE) in non-magnetic materials can generate spin currents, but its use for magnetic manipulation has been limited. The study reports a large SHE in high-resistivity β-Ta, with a spin Hall angle (θ_SH) of 0.12-0.15, larger and with opposite sign to Pt's θ_SH (~0.07). Unlike Pt, Ta does not significantly increase magnetic damping in adjacent layers, making it effective for anti-damping spin torque switching of in-plane polarized magnetic layers. The study demonstrates a novel three-terminal device where the SHE-ST from Ta induces current-induced switching of an in-plane polarized CoFeB layer, with read-out using a magnetic tunnel junction. This device is simple to fabricate and offers comparable efficiency to conventional MTJs with improved reliability and signal levels, making it suitable for magnetic memory and non-volatile spin logic applications. The study also shows that the SHE in β-Ta can switch perpendicularly magnetized ferromagnetic layers, with the spin Hall effect enabling abrupt switching of the magnetic moment. The device's performance is validated through various measurements, including ST-FMR and TMR, confirming the effectiveness of the SHE in Ta for spin torque switching. The study highlights the potential of β-Ta for future magnetic memory and spin logic technologies due to its large SHE and minimal magnetic damping effects. The results suggest that further improvements in fabrication could reduce switching currents, making three-terminal SHE devices competitive with conventional MTJs in efficiency and reliability.Researchers report a giant spin Hall effect (SHE) in β-Ta, which generates intense spin currents capable of efficiently switching ferromagnets, offering a new method for controlling magnetic devices. The study quantifies the SHE using three methods and demonstrates spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. A three-terminal device utilizing a low-impedance Ta-ferromagnet bilayer for switching and a high-impedance magnetic tunnel junction for read-out is implemented. The device's efficiency, reliability, and simplicity suggest it can overcome current limitations in magnetic memory and non-volatile spin logic technologies. Spin-polarized currents can apply torques to magnetic moments via spin angular momentum transfer, enabling manipulation of nanoscale devices with lower currents than magnetic-field-based control. Previously, spin currents were generated by passing electron currents through magnetic polarizing layers, leading to two-terminal magnetic tunnel junctions (MTJs) as the most promising device geometry. However, MTJs face challenges in reliability and manufacturing. The spin Hall effect (SHE) in non-magnetic materials can generate spin currents, but its use for magnetic manipulation has been limited. The study reports a large SHE in high-resistivity β-Ta, with a spin Hall angle (θ_SH) of 0.12-0.15, larger and with opposite sign to Pt's θ_SH (~0.07). Unlike Pt, Ta does not significantly increase magnetic damping in adjacent layers, making it effective for anti-damping spin torque switching of in-plane polarized magnetic layers. The study demonstrates a novel three-terminal device where the SHE-ST from Ta induces current-induced switching of an in-plane polarized CoFeB layer, with read-out using a magnetic tunnel junction. This device is simple to fabricate and offers comparable efficiency to conventional MTJs with improved reliability and signal levels, making it suitable for magnetic memory and non-volatile spin logic applications. The study also shows that the SHE in β-Ta can switch perpendicularly magnetized ferromagnetic layers, with the spin Hall effect enabling abrupt switching of the magnetic moment. The device's performance is validated through various measurements, including ST-FMR and TMR, confirming the effectiveness of the SHE in Ta for spin torque switching. The study highlights the potential of β-Ta for future magnetic memory and spin logic technologies due to its large SHE and minimal magnetic damping effects. The results suggest that further improvements in fabrication could reduce switching currents, making three-terminal SHE devices competitive with conventional MTJs in efficiency and reliability.