This paper reports a large spin Hall effect (SHE) in β-W thin films, with a spin Hall angle of |θ_SH^β-W| ≈ 0.3, which is twice as large as the previously reported value for β-Ta. The study uses spin torque ferromagnetic resonance (ST-FMR) and 3-terminal nanoscale magnetic tunnel junction (MTJ) devices to measure the SHE in β-W. The results show that the spin Hall angle varies with the resistivity and phase composition of the W film, with higher resistivity (β-W) phases having larger spin Hall angles. The spin Hall effect in β-W is found to be efficient for magnetization switching in 3-terminal devices, demonstrating its potential for spintronics applications. The study also shows that the spin Hall angle decreases with increasing thickness and resistivity of the W film, with the lowest values observed in α-W films. The results indicate that β-W is particularly well-suited for spintronics applications due to its large spin Hall angle and high resistivity. The study provides independent confirmation of the large spin Hall angle in β-W through multiple measurements and demonstrates the effectiveness of the spin Hall effect in β-W for spin transfer torque (STT) applications. The results also highlight the strong correlation between the spin Hall strength and the W film resistivity, providing insights into the mechanism of the giant spin Hall effect in W. The study is supported by various funding agencies and acknowledges the contributions of colleagues in the research.This paper reports a large spin Hall effect (SHE) in β-W thin films, with a spin Hall angle of |θ_SH^β-W| ≈ 0.3, which is twice as large as the previously reported value for β-Ta. The study uses spin torque ferromagnetic resonance (ST-FMR) and 3-terminal nanoscale magnetic tunnel junction (MTJ) devices to measure the SHE in β-W. The results show that the spin Hall angle varies with the resistivity and phase composition of the W film, with higher resistivity (β-W) phases having larger spin Hall angles. The spin Hall effect in β-W is found to be efficient for magnetization switching in 3-terminal devices, demonstrating its potential for spintronics applications. The study also shows that the spin Hall angle decreases with increasing thickness and resistivity of the W film, with the lowest values observed in α-W films. The results indicate that β-W is particularly well-suited for spintronics applications due to its large spin Hall angle and high resistivity. The study provides independent confirmation of the large spin Hall angle in β-W through multiple measurements and demonstrates the effectiveness of the spin Hall effect in β-W for spin transfer torque (STT) applications. The results also highlight the strong correlation between the spin Hall strength and the W film resistivity, providing insights into the mechanism of the giant spin Hall effect in W. The study is supported by various funding agencies and acknowledges the contributions of colleagues in the research.