The authors report a significant giant spin Hall effect (SHE) in β-W thin films, with a spin Hall angle (|θSH|) of 0.30 ± 0.02, determined through spin torque-induced ferromagnetic resonance (ST-FMR) measurements on β-W/CoFeB bilayer microstrips. This large angle allows an in-plane current to efficiently reverse the orientation of an in-plane magnetized CoFeB free layer in a nanoscale magnetic tunnel junction (MTJ) adjacent to a thin β-W layer. The SHE-ST switching efficiency is also observed in 3-terminal MTJ devices, confirming the spin Hall angle of |θSH| = 0.33 ± 0.06. The study further investigates the variation of the spin Hall switching efficiency with different W layers of varying resistivities and phase compositions, showing a direct correlation between W resistivity and |θSH|. The results highlight the potential of β-W for high-performance spintronics applications, particularly in magnetic memory and spin logic devices.The authors report a significant giant spin Hall effect (SHE) in β-W thin films, with a spin Hall angle (|θSH|) of 0.30 ± 0.02, determined through spin torque-induced ferromagnetic resonance (ST-FMR) measurements on β-W/CoFeB bilayer microstrips. This large angle allows an in-plane current to efficiently reverse the orientation of an in-plane magnetized CoFeB free layer in a nanoscale magnetic tunnel junction (MTJ) adjacent to a thin β-W layer. The SHE-ST switching efficiency is also observed in 3-terminal MTJ devices, confirming the spin Hall angle of |θSH| = 0.33 ± 0.06. The study further investigates the variation of the spin Hall switching efficiency with different W layers of varying resistivities and phase compositions, showing a direct correlation between W resistivity and |θSH|. The results highlight the potential of β-W for high-performance spintronics applications, particularly in magnetic memory and spin logic devices.