This paper presents a study on the strain-engineered anisotropic electrical conductance of phosphorene and few-layer black phosphorus. Using first-principles simulations, the authors demonstrate that the unique anisotropic conductance of phosphorene can be controlled by applying simple strain conditions. By applying appropriate biaxial or uniaxial strain, the preferred conducting direction can be rotated by 90 degrees, which is useful for exploring quantum Hall effects and other electronic and mechanical applications. Strain has been known to be an effective method for controlling the electronic, transport, and optical properties of semiconductors. This is particularly useful for engineering 1D and 2D crystals, as they can sustain larger strains than bulk crystals. Phosphorene, a promising 2D semiconductor, exhibits a finite direct band gap and anisotropic electric conductance, distinguishing it from other 2D materials like graphene. The study shows that strain can be used to control the anisotropic electrical conductance of phosphorene. By applying uniaxial or biaxial strain, the preferred conducting direction can be rotated by 90 degrees. This is achieved by switching the energy order of the first and second lowest-energy conduction bands, which is induced by strain. The anisotropic effective mass of electrons and holes is responsible for the observed anisotropic conductance. The study also shows that the anisotropic conductance can be tuned by applying strain to phosphorene. The calculated electron mobility along specific directions (zigzag and armchair) is significantly higher for phosphorene compared to other 2D semiconductors like MoS2. The critical transition between anisotropic mobilities occurs at a strain between 3% and 4%, which is well within current experimental capabilities. The study concludes that strain can be used to engineer the unique anisotropic electrical conductance of phosphorene. This discovery opens up new opportunities for studying novel mechanical-electronic devices and unusual quantum Hall effects related to strongly anisotropic effective masses. The results demonstrate that strain is a powerful tool for controlling the electronic properties of 2D materials.This paper presents a study on the strain-engineered anisotropic electrical conductance of phosphorene and few-layer black phosphorus. Using first-principles simulations, the authors demonstrate that the unique anisotropic conductance of phosphorene can be controlled by applying simple strain conditions. By applying appropriate biaxial or uniaxial strain, the preferred conducting direction can be rotated by 90 degrees, which is useful for exploring quantum Hall effects and other electronic and mechanical applications. Strain has been known to be an effective method for controlling the electronic, transport, and optical properties of semiconductors. This is particularly useful for engineering 1D and 2D crystals, as they can sustain larger strains than bulk crystals. Phosphorene, a promising 2D semiconductor, exhibits a finite direct band gap and anisotropic electric conductance, distinguishing it from other 2D materials like graphene. The study shows that strain can be used to control the anisotropic electrical conductance of phosphorene. By applying uniaxial or biaxial strain, the preferred conducting direction can be rotated by 90 degrees. This is achieved by switching the energy order of the first and second lowest-energy conduction bands, which is induced by strain. The anisotropic effective mass of electrons and holes is responsible for the observed anisotropic conductance. The study also shows that the anisotropic conductance can be tuned by applying strain to phosphorene. The calculated electron mobility along specific directions (zigzag and armchair) is significantly higher for phosphorene compared to other 2D semiconductors like MoS2. The critical transition between anisotropic mobilities occurs at a strain between 3% and 4%, which is well within current experimental capabilities. The study concludes that strain can be used to engineer the unique anisotropic electrical conductance of phosphorene. This discovery opens up new opportunities for studying novel mechanical-electronic devices and unusual quantum Hall effects related to strongly anisotropic effective masses. The results demonstrate that strain is a powerful tool for controlling the electronic properties of 2D materials.