This paper presents a novel strain-insensitive viscoelastic perovskite film for intrinsically stretchable neuromorphic vision-adaptive transistors (ISNVaTs). The film, composed of CsPbBr3 quantum dots and SEBS elastomer, is assembled into quasi-continuous microsphere morphologies, ensuring intrinsic stretchability and retentive photosensitivity. The ISNVaTs exhibit trichromatic photodaptation, rapid adaptive speed (<150 s), ultra-low energy consumption (15 aJ), and a high paired-pulse facilitation index (270%). These properties make the ISNVaTs suitable for high-resolution adaptive imaging, comparable to human eyes, and promising for applications in visual prosthetics, bio-inspired robots, and unmanned intelligence. The device's ability to maintain its performance under mechanical strains up to 100% and its fast adaptation speed under various light intensities and gate voltages demonstrate its potential for advanced intelligent neuromorphic electronics.This paper presents a novel strain-insensitive viscoelastic perovskite film for intrinsically stretchable neuromorphic vision-adaptive transistors (ISNVaTs). The film, composed of CsPbBr3 quantum dots and SEBS elastomer, is assembled into quasi-continuous microsphere morphologies, ensuring intrinsic stretchability and retentive photosensitivity. The ISNVaTs exhibit trichromatic photodaptation, rapid adaptive speed (<150 s), ultra-low energy consumption (15 aJ), and a high paired-pulse facilitation index (270%). These properties make the ISNVaTs suitable for high-resolution adaptive imaging, comparable to human eyes, and promising for applications in visual prosthetics, bio-inspired robots, and unmanned intelligence. The device's ability to maintain its performance under mechanical strains up to 100% and its fast adaptation speed under various light intensities and gate voltages demonstrate its potential for advanced intelligent neuromorphic electronics.