A strain-insensitive viscoelastic perovskite film is used to create intrinsically stretchable neuromorphic vision-adaptive transistors (ISNVaTs) for advanced neuromorphic vision systems. The film, with a quasi-continuous microsphere (QCM) morphology, enables high photosensitivity and stretchability, and allows for tunable charge-trapping defects that guide photoadaptation and synaptic behaviors. The resulting ISNVaTs exhibit trichromatic photoadaptation, a rapid adaptive speed (<150 s), and ultra-low energy consumption (15 aJ), surpassing human visual performance. When acting as an artificial synapse, the ISNVaTs demonstrate a record high paired-pulse facilitation (PPF) index of 270%, one of the best figures of merit in stretchable synaptic phototransistors. The devices also enable adaptive optical imaging, accelerating the development of next-generation neuromorphic vision systems. The ISNVaTs are highly durable, maintaining performance under mechanical strain and showing excellent scotopic and photopic adaptation. They are promising for applications in visual prosthetics, bioinspired robots, and unmanned intelligence. The devices are fabricated using a bottom-gate-top-contact configuration and involve the integration of a viscoelastic perovskite film with a DPP-DTT/SEBS nanoconfined semiconductor film. The ISNVaTs demonstrate high biaxial stretchability (up to 100%) and excellent optical and electrical performance, making them suitable for intelligent visualization applications. The results show that the ISNVaTs can emulate both scotopic and photopic adaptation, with a fast response time and high adaptability to light intensity and gate voltage. The devices are also capable of adaptive imaging, with high-contrast images under different illumination conditions. The ISNVaTs are expected to enable next-generation skin-like artificial intelligence equipment with enhanced visual perception and adaptation capabilities.A strain-insensitive viscoelastic perovskite film is used to create intrinsically stretchable neuromorphic vision-adaptive transistors (ISNVaTs) for advanced neuromorphic vision systems. The film, with a quasi-continuous microsphere (QCM) morphology, enables high photosensitivity and stretchability, and allows for tunable charge-trapping defects that guide photoadaptation and synaptic behaviors. The resulting ISNVaTs exhibit trichromatic photoadaptation, a rapid adaptive speed (<150 s), and ultra-low energy consumption (15 aJ), surpassing human visual performance. When acting as an artificial synapse, the ISNVaTs demonstrate a record high paired-pulse facilitation (PPF) index of 270%, one of the best figures of merit in stretchable synaptic phototransistors. The devices also enable adaptive optical imaging, accelerating the development of next-generation neuromorphic vision systems. The ISNVaTs are highly durable, maintaining performance under mechanical strain and showing excellent scotopic and photopic adaptation. They are promising for applications in visual prosthetics, bioinspired robots, and unmanned intelligence. The devices are fabricated using a bottom-gate-top-contact configuration and involve the integration of a viscoelastic perovskite film with a DPP-DTT/SEBS nanoconfined semiconductor film. The ISNVaTs demonstrate high biaxial stretchability (up to 100%) and excellent optical and electrical performance, making them suitable for intelligent visualization applications. The results show that the ISNVaTs can emulate both scotopic and photopic adaptation, with a fast response time and high adaptability to light intensity and gate voltage. The devices are also capable of adaptive imaging, with high-contrast images under different illumination conditions. The ISNVaTs are expected to enable next-generation skin-like artificial intelligence equipment with enhanced visual perception and adaptation capabilities.