Strategies to advance thermoelectric performance of PbSe and PbS materials

Strategies to advance thermoelectric performance of PbSe and PbS materials

31 May 2024 | Zheng-Hao Hou, Xin Qian, Qiu-Juan Cui, Shu-Fang Wang, Li-Dong Zhao
The article "Strategies to Advance Thermoelectric Performance of PbSe and PbS Materials" by Zheng-Hao Hou, Xin Qian, Qiu-Juan Cui, Shu-Fang Wang, and Li-Dong Zhao reviews the advancements and optimization strategies for improving the thermoelectric performance of lead selenide (PbSe) and lead sulfide (PbS) materials. These materials are gaining attention due to their abundant elemental supply and relatively low costs compared to traditional thermoelectric materials like Bi2Te3 and PbTe, which are expensive and have limited availability of tellurium (Te). The authors highlight that the thermoelectric conversion efficiency is influenced by the figure of merit (ZT), which is calculated using the Seebeck coefficient (S), electrical conductivity (σ), absolute temperature (T), electronic thermal conductivity (kele), and lattice thermal conductivity (klat). To enhance ZT, several strategies are discussed, including optimizing carrier concentration, enhancing density-of-state effective mass, improving carrier mobility, and reducing lattice thermal conductivity. Optimization of carrier concentration involves aliovalent doping, dynamic doping, and defect state management. The optimal carrier concentration for PbSe/PbS materials ranges from 1 × 10^19 to 1 × 10^20 cm^-3. Aliovalent doping, such as In, Cl, and Bi for n-type PbSe, and Ag, Na, and K for p-type PbSe, can effectively adjust carrier concentration. Dynamic doping is necessary to maintain optimal carrier concentration across different temperatures. Enhancing density-of-state effective mass through band convergence, band flattening, resonant level, and energy filtering effects can improve the Seebeck coefficient. Band sharpening and band alignment are crucial for enhancing carrier mobility. Designing defect structures, including atomic-scale point defects, nanoprecipitates, dislocations, grain boundaries, and hierarchical architectures, can significantly reduce lattice thermal conductivity. The review provides a comprehensive analysis of these strategies and their impact on the thermoelectric performance of PbSe and PbS materials, offering insights for future research and development.The article "Strategies to Advance Thermoelectric Performance of PbSe and PbS Materials" by Zheng-Hao Hou, Xin Qian, Qiu-Juan Cui, Shu-Fang Wang, and Li-Dong Zhao reviews the advancements and optimization strategies for improving the thermoelectric performance of lead selenide (PbSe) and lead sulfide (PbS) materials. These materials are gaining attention due to their abundant elemental supply and relatively low costs compared to traditional thermoelectric materials like Bi2Te3 and PbTe, which are expensive and have limited availability of tellurium (Te). The authors highlight that the thermoelectric conversion efficiency is influenced by the figure of merit (ZT), which is calculated using the Seebeck coefficient (S), electrical conductivity (σ), absolute temperature (T), electronic thermal conductivity (kele), and lattice thermal conductivity (klat). To enhance ZT, several strategies are discussed, including optimizing carrier concentration, enhancing density-of-state effective mass, improving carrier mobility, and reducing lattice thermal conductivity. Optimization of carrier concentration involves aliovalent doping, dynamic doping, and defect state management. The optimal carrier concentration for PbSe/PbS materials ranges from 1 × 10^19 to 1 × 10^20 cm^-3. Aliovalent doping, such as In, Cl, and Bi for n-type PbSe, and Ag, Na, and K for p-type PbSe, can effectively adjust carrier concentration. Dynamic doping is necessary to maintain optimal carrier concentration across different temperatures. Enhancing density-of-state effective mass through band convergence, band flattening, resonant level, and energy filtering effects can improve the Seebeck coefficient. Band sharpening and band alignment are crucial for enhancing carrier mobility. Designing defect structures, including atomic-scale point defects, nanoprecipitates, dislocations, grain boundaries, and hierarchical architectures, can significantly reduce lattice thermal conductivity. The review provides a comprehensive analysis of these strategies and their impact on the thermoelectric performance of PbSe and PbS materials, offering insights for future research and development.
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