This paper presents the results of a study on the structural properties of silicon doped with ytterbium impurities, conducted using Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The samples were analyzed using FSM-2201 and SENTERRA II Bruker spectrometers to identify both crystalline and amorphous phases. The study found that doping silicon with ytterbium impurities reduces the concentration of optically active oxygen by 30-40%, depending on the impurity concentration. An increase in defects leads to a broadening of the amorphous zone. The relative intensity of three Raman bands in Si-Yb systems changes, indicating the formation of pendant bonds through the breaking of Si-Si bonds. Raman spectroscopy revealed a structural transformation characterized by a densely packed array of nanocrystals with a size less than 11 lattice parameters, under strong internal stress (up to 3 GPa). This stress likely prevents the cluster size from increasing beyond the critical value for irreversible crystallization. The findings suggest that the Si-Yb system exhibits similar dependencies to those observed in other systems, but such results have not been previously reported.This paper presents the results of a study on the structural properties of silicon doped with ytterbium impurities, conducted using Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The samples were analyzed using FSM-2201 and SENTERRA II Bruker spectrometers to identify both crystalline and amorphous phases. The study found that doping silicon with ytterbium impurities reduces the concentration of optically active oxygen by 30-40%, depending on the impurity concentration. An increase in defects leads to a broadening of the amorphous zone. The relative intensity of three Raman bands in Si-Yb systems changes, indicating the formation of pendant bonds through the breaking of Si-Si bonds. Raman spectroscopy revealed a structural transformation characterized by a densely packed array of nanocrystals with a size less than 11 lattice parameters, under strong internal stress (up to 3 GPa). This stress likely prevents the cluster size from increasing beyond the critical value for irreversible crystallization. The findings suggest that the Si-Yb system exhibits similar dependencies to those observed in other systems, but such results have not been previously reported.