The paper reports the discovery of superconductivity in boron-doped diamond synthesized under high pressure (8-9 GPa) and temperature (2,500-2,800 K). The resistivity, magnetic susceptibility, specific heat, and field-dependent resistance measurements indicate that boron-doped diamond is a bulk, type-II superconductor with a transition temperature \( T_c \approx 4 \) K and an upper critical field \( H_{c2}(0) \geq 3.5 \) T. The superconductivity is not filamentary, as evidenced by diamagnetic responses and magnetic hysteresis. The study suggests that other group-IV semiconductors with the diamond structure, such as silicon and germanium, may also exhibit superconductivity under appropriate conditions. The findings highlight the potential for electronic applications of diamond and doped diamond, particularly in microchip substrates, electron emitters, photodetectors, and transistors.The paper reports the discovery of superconductivity in boron-doped diamond synthesized under high pressure (8-9 GPa) and temperature (2,500-2,800 K). The resistivity, magnetic susceptibility, specific heat, and field-dependent resistance measurements indicate that boron-doped diamond is a bulk, type-II superconductor with a transition temperature \( T_c \approx 4 \) K and an upper critical field \( H_{c2}(0) \geq 3.5 \) T. The superconductivity is not filamentary, as evidenced by diamagnetic responses and magnetic hysteresis. The study suggests that other group-IV semiconductors with the diamond structure, such as silicon and germanium, may also exhibit superconductivity under appropriate conditions. The findings highlight the potential for electronic applications of diamond and doped diamond, particularly in microchip substrates, electron emitters, photodetectors, and transistors.