This article presents a novel near-mid infrared ultraminiaturized graphene photodetector with a configurable 2D potential well, which significantly enhances the device's performance. The 2D potential well, constructed using dielectric structures, spatially traps photogenerated carriers in graphene, inhibiting their recombination and improving the external quantum efficiency (EQE) and photogain. The device achieves a high responsivity of 0.2 A/W–38 A/W across a broad infrared detection band from 1.55 to 11 μm. A room-temperature detectivity of nearly 1×10⁹ cm Hz¹/² W⁻¹ is obtained under blackbody radiation. The synergistic effect of electric and light fields in the 2D potential well enables high-efficiency polarization-sensitive detection at tunable wavelengths. The device is compatible with complementary metal-oxide-semiconductor (CMOS) technology and offers a promising solution for high-performance, multifunctional infrared photodetectors. The photodetector utilizes a graphene/silicon-on-insulator structure with a 2D dielectric slit-induced potential well. The slit structure introduces periodic surface potential wells on the graphene surface, enhancing the separation and trapping of photogenerated carriers. This design enables a wide spectral range detection and high responsivity. The device's performance is further enhanced by the synergistic effect of electric and light fields, allowing for polarization-sensitive detection. The structure is fabricated using a combination of electron-beam lithography, dry etching, and spin coating techniques. The device's polarization sensitivity is demonstrated through measurements showing high reflection polarization ratios for specific polarization directions. The photodetector is characterized using various methods, including blackbody radiation testing, which confirms its high detectivity and low noise. The device's performance is also evaluated under different temperatures and wavelengths, demonstrating its stability and wide operational range. The results show that the 2D slit structure significantly enhances the photogating effect, leading to high responsivity and low noise. The device is compatible with silicon-based CMOS processes, making it suitable for integration with existing semiconductor technologies. The study highlights the potential of graphene-based photodetectors for high-sensitivity, high-performance infrared detection applications.This article presents a novel near-mid infrared ultraminiaturized graphene photodetector with a configurable 2D potential well, which significantly enhances the device's performance. The 2D potential well, constructed using dielectric structures, spatially traps photogenerated carriers in graphene, inhibiting their recombination and improving the external quantum efficiency (EQE) and photogain. The device achieves a high responsivity of 0.2 A/W–38 A/W across a broad infrared detection band from 1.55 to 11 μm. A room-temperature detectivity of nearly 1×10⁹ cm Hz¹/² W⁻¹ is obtained under blackbody radiation. The synergistic effect of electric and light fields in the 2D potential well enables high-efficiency polarization-sensitive detection at tunable wavelengths. The device is compatible with complementary metal-oxide-semiconductor (CMOS) technology and offers a promising solution for high-performance, multifunctional infrared photodetectors. The photodetector utilizes a graphene/silicon-on-insulator structure with a 2D dielectric slit-induced potential well. The slit structure introduces periodic surface potential wells on the graphene surface, enhancing the separation and trapping of photogenerated carriers. This design enables a wide spectral range detection and high responsivity. The device's performance is further enhanced by the synergistic effect of electric and light fields, allowing for polarization-sensitive detection. The structure is fabricated using a combination of electron-beam lithography, dry etching, and spin coating techniques. The device's polarization sensitivity is demonstrated through measurements showing high reflection polarization ratios for specific polarization directions. The photodetector is characterized using various methods, including blackbody radiation testing, which confirms its high detectivity and low noise. The device's performance is also evaluated under different temperatures and wavelengths, demonstrating its stability and wide operational range. The results show that the 2D slit structure significantly enhances the photogating effect, leading to high responsivity and low noise. The device is compatible with silicon-based CMOS processes, making it suitable for integration with existing semiconductor technologies. The study highlights the potential of graphene-based photodetectors for high-sensitivity, high-performance infrared detection applications.