This study presents a synergistic-potential engineering approach to enhance the performance of graphene photodetectors for near- to mid-infrared light. The researchers developed an ultra-miniaturized graphene photodetector with a configurable 2D potential well, constructed by dielectric structures. This design spatially produces a strong trapping force on photogenerated carriers in graphene, inhibiting their recombination and improving the external quantum efficiency (EQE) and photogain of the device. The device exhibits a high responsivity of 0.2 A/W to 38 A/W across a broad infrared detection band from 1.55 to 11 μm, with a room-temperature detectivity of up to 1 × 10^9 cm Hz^1/2 W^-1 under blackbody radiation. The synergistic effect of electric and light fields in the 2D potential well enables high-efficiency polarization-sensitive detection at tunable wavelengths. The design is compatible with CMOS technology, making it suitable for high-performance, multi-functional infrared photodetectors.This study presents a synergistic-potential engineering approach to enhance the performance of graphene photodetectors for near- to mid-infrared light. The researchers developed an ultra-miniaturized graphene photodetector with a configurable 2D potential well, constructed by dielectric structures. This design spatially produces a strong trapping force on photogenerated carriers in graphene, inhibiting their recombination and improving the external quantum efficiency (EQE) and photogain of the device. The device exhibits a high responsivity of 0.2 A/W to 38 A/W across a broad infrared detection band from 1.55 to 11 μm, with a room-temperature detectivity of up to 1 × 10^9 cm Hz^1/2 W^-1 under blackbody radiation. The synergistic effect of electric and light fields in the 2D potential well enables high-efficiency polarization-sensitive detection at tunable wavelengths. The design is compatible with CMOS technology, making it suitable for high-performance, multi-functional infrared photodetectors.