The paper discusses the synthesis, structure, and properties of boron and nitrogen doped graphene. The authors prepared B- and N-doped graphene bilayer samples using arc discharge methods and characterized them using various techniques such as X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS), X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), and thermogravimetric analysis (TGA). The doping levels were determined, and the Raman spectra were analyzed to observe changes in the G band and D band, which indicate the presence and extent of doping. First-principles density functional theory (DFT) calculations were performed to understand the structural and electronic properties of the doped graphene. The results show that both B- and N-doping stiffen the G band and intensify the D band, with the intensity ratio of the 2D and G bands varying with doping concentration. The electronic structure calculations reveal that the Fermi energy shifts by -0.65 eV and 0.59 eV for 2 at% B and N substitutions, respectively, leading to p-type and n-type semiconducting behavior. The study also highlights the importance of dynamic corrections in understanding the phonon frequency shifts in doped graphene. Overall, the findings suggest that B- and N-doped graphene can be synthesized to exhibit p- and n-type semiconducting properties, which could be useful for various electronic devices.The paper discusses the synthesis, structure, and properties of boron and nitrogen doped graphene. The authors prepared B- and N-doped graphene bilayer samples using arc discharge methods and characterized them using various techniques such as X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS), X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), and thermogravimetric analysis (TGA). The doping levels were determined, and the Raman spectra were analyzed to observe changes in the G band and D band, which indicate the presence and extent of doping. First-principles density functional theory (DFT) calculations were performed to understand the structural and electronic properties of the doped graphene. The results show that both B- and N-doping stiffen the G band and intensify the D band, with the intensity ratio of the 2D and G bands varying with doping concentration. The electronic structure calculations reveal that the Fermi energy shifts by -0.65 eV and 0.59 eV for 2 at% B and N substitutions, respectively, leading to p-type and n-type semiconducting behavior. The study also highlights the importance of dynamic corrections in understanding the phonon frequency shifts in doped graphene. Overall, the findings suggest that B- and N-doped graphene can be synthesized to exhibit p- and n-type semiconducting properties, which could be useful for various electronic devices.