The paper presents the synthesis of large-area monolayer MoS₂ atomic layers using chemical vapor deposition (CVD) on amorphous SiO₂/Si substrates. The authors demonstrate that the growth of MoS₂ is highly sensitive to the substrate treatment, particularly the use of graphene-like molecules such as reduced graphene oxide (rGO), perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS), and perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA). These treatments act as seeds for the layer growth of MoS₂, leading to the formation of large-area, highly crystalline MoS₂ films. The thickness of the MoS₂ films ranges from monolayers to a few layers, with a lateral size up to several millimeters. Spectroscopic, microscopic, and electrical measurements confirm the high crystallinity and monolayer nature of the MoS₂ films. The electrical performance of the MoS₂ films is evaluated through the fabrication of bottom-gate transistors, showing an on-off current ratio of approximately 1x10⁴ and a hole mobility of up to 0.02 cm²/(V-s). The study also highlights the reproducibility of the layer growth behavior of MoS₂ and WS₂ on substrates pre-treated with graphene-like molecules, suggesting potential applications in various fields such as electronics and optoelectronics.The paper presents the synthesis of large-area monolayer MoS₂ atomic layers using chemical vapor deposition (CVD) on amorphous SiO₂/Si substrates. The authors demonstrate that the growth of MoS₂ is highly sensitive to the substrate treatment, particularly the use of graphene-like molecules such as reduced graphene oxide (rGO), perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS), and perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA). These treatments act as seeds for the layer growth of MoS₂, leading to the formation of large-area, highly crystalline MoS₂ films. The thickness of the MoS₂ films ranges from monolayers to a few layers, with a lateral size up to several millimeters. Spectroscopic, microscopic, and electrical measurements confirm the high crystallinity and monolayer nature of the MoS₂ films. The electrical performance of the MoS₂ films is evaluated through the fabrication of bottom-gate transistors, showing an on-off current ratio of approximately 1x10⁴ and a hole mobility of up to 0.02 cm²/(V-s). The study also highlights the reproducibility of the layer growth behavior of MoS₂ and WS₂ on substrates pre-treated with graphene-like molecules, suggesting potential applications in various fields such as electronics and optoelectronics.