This study investigates the temperature-dependent transport properties of ultra-clean suspended graphene. The resistivity of suspended graphene is strongly temperature-dependent between 5 K and 240 K. At low temperatures, transport is near-ballistic, with a mobility of ~170,000 cm²/Vs. At higher temperatures, the resistivity increases linearly with temperature, suggesting scattering from acoustic phonons. At 240 K, the mobility is ~120,000 cm²/Vs, the highest reported for any semiconductor. Near the charge neutrality point, the conductivity decreases with decreasing temperature, indicating reduced charge inhomogeneity. Suspended graphene devices show significantly reduced carrier scattering compared to unsuspended devices. After annealing, the mobility increases to ~170,000 cm²/Vs, with a mean free path of ~1 µm, suggesting near-ballistic transport. The temperature dependence of the resistivity reveals two distinct behaviors depending on carrier density. At high densities, the conductivity is metallic, decreasing with temperature, attributed to electron-phonon scattering. At low densities, the conductivity is non-metallic, decreasing with decreasing temperature, indicating reduced charge inhomogeneity. The temperature dependence of the resistivity provides insights into the scattering mechanisms. Before annealing, the resistivity shows a small variation with temperature, while after annealing, it exhibits a pronounced variation. The linear rise of resistivity at high temperatures is attributed to phonon scattering. The deformation potential, D, is estimated to be ~29 eV for electrons and ~50 eV for holes, consistent with values in graphite. The minimum conductivity, σ_min, shows a strong temperature dependence after annealing, consistent with very low inhomogeneity density (~10⁸ cm⁻²). The study demonstrates that suspended, current-annealed graphene can sustain near-ballistic transport over micron dimensions. The results highlight the exceptional quality of suspended graphene and its potential for high-performance electronic applications.This study investigates the temperature-dependent transport properties of ultra-clean suspended graphene. The resistivity of suspended graphene is strongly temperature-dependent between 5 K and 240 K. At low temperatures, transport is near-ballistic, with a mobility of ~170,000 cm²/Vs. At higher temperatures, the resistivity increases linearly with temperature, suggesting scattering from acoustic phonons. At 240 K, the mobility is ~120,000 cm²/Vs, the highest reported for any semiconductor. Near the charge neutrality point, the conductivity decreases with decreasing temperature, indicating reduced charge inhomogeneity. Suspended graphene devices show significantly reduced carrier scattering compared to unsuspended devices. After annealing, the mobility increases to ~170,000 cm²/Vs, with a mean free path of ~1 µm, suggesting near-ballistic transport. The temperature dependence of the resistivity reveals two distinct behaviors depending on carrier density. At high densities, the conductivity is metallic, decreasing with temperature, attributed to electron-phonon scattering. At low densities, the conductivity is non-metallic, decreasing with decreasing temperature, indicating reduced charge inhomogeneity. The temperature dependence of the resistivity provides insights into the scattering mechanisms. Before annealing, the resistivity shows a small variation with temperature, while after annealing, it exhibits a pronounced variation. The linear rise of resistivity at high temperatures is attributed to phonon scattering. The deformation potential, D, is estimated to be ~29 eV for electrons and ~50 eV for holes, consistent with values in graphite. The minimum conductivity, σ_min, shows a strong temperature dependence after annealing, consistent with very low inhomogeneity density (~10⁸ cm⁻²). The study demonstrates that suspended, current-annealed graphene can sustain near-ballistic transport over micron dimensions. The results highlight the exceptional quality of suspended graphene and its potential for high-performance electronic applications.