The resistivity of ultra-clean suspended graphene exhibits a strong temperature ($T$) dependence over the range of 5 K to 240 K. At low temperatures, near-ballistic transport is observed in devices with dimensions of about 2 μm and a mobility of approximately 170,000 cm²/Vs. At high carrier densities ($n > 0.5 \times 10^{11}$ cm⁻²), the resistivity increases linearly with $T$ above 50 K, suggesting carrier scattering from acoustic phonons. At $T = 240$ K, the mobility is around 120,000 cm²/Vs, higher than in any known semiconductor. Near the charge neutrality point, the conductivity decreases with decreasing $T$, indicating a density inhomogeneity of less than $10^8$ cm⁻². The study also highlights the significant improvement in mobility after current annealing, which can reach over 200,000 cm²/Vs. The $T$-dependence of resistivity in suspended graphene is distinct from that in unsuspended samples, with a modest increase from 5 K to 240 K, maintaining a high mobility. The linear rise of resistivity with $T$ at high densities suggests electron-phonon interaction as the dominant scattering mechanism, while the density and carrier-type dependence of the slope of resistivity with $T$ remains unclear. The observed strong $T$-dependence of the minimum conductivity in high mobility suspended devices indicates very low inhomogeneity density.The resistivity of ultra-clean suspended graphene exhibits a strong temperature ($T$) dependence over the range of 5 K to 240 K. At low temperatures, near-ballistic transport is observed in devices with dimensions of about 2 μm and a mobility of approximately 170,000 cm²/Vs. At high carrier densities ($n > 0.5 \times 10^{11}$ cm⁻²), the resistivity increases linearly with $T$ above 50 K, suggesting carrier scattering from acoustic phonons. At $T = 240$ K, the mobility is around 120,000 cm²/Vs, higher than in any known semiconductor. Near the charge neutrality point, the conductivity decreases with decreasing $T$, indicating a density inhomogeneity of less than $10^8$ cm⁻². The study also highlights the significant improvement in mobility after current annealing, which can reach over 200,000 cm²/Vs. The $T$-dependence of resistivity in suspended graphene is distinct from that in unsuspended samples, with a modest increase from 5 K to 240 K, maintaining a high mobility. The linear rise of resistivity with $T$ at high densities suggests electron-phonon interaction as the dominant scattering mechanism, while the density and carrier-type dependence of the slope of resistivity with $T$ remains unclear. The observed strong $T$-dependence of the minimum conductivity in high mobility suspended devices indicates very low inhomogeneity density.