The paper discusses the electroforming mechanism of metal oxide memristive switches, which are crucial for advanced computer memory and logic circuits. The electroforming process, typically a one-time application of high voltage or current, is essential for obtaining metal oxide resistance switches but has been a source of device variability. The authors explain that electroforming is an electro-reduction and vacancy creation process caused by high electric fields and enhanced by Joule heating. Oxygen vacancies drift towards the cathode, forming localized conducting channels, while O2− ions drift towards the anode, evolving into O2 gas and causing physical deformation. The physical deformation can be mitigated by shrinking the device to the nanoscale and controlling the voltage polarity. The authors also propose a method to eliminate the electroforming process by engineering the device structure to favor interface-controlled electronic switching over bulk oxide effects. This understanding provides new control and repeatability, promising improved engineering of switches for future nanoscale integrated circuits.The paper discusses the electroforming mechanism of metal oxide memristive switches, which are crucial for advanced computer memory and logic circuits. The electroforming process, typically a one-time application of high voltage or current, is essential for obtaining metal oxide resistance switches but has been a source of device variability. The authors explain that electroforming is an electro-reduction and vacancy creation process caused by high electric fields and enhanced by Joule heating. Oxygen vacancies drift towards the cathode, forming localized conducting channels, while O2− ions drift towards the anode, evolving into O2 gas and causing physical deformation. The physical deformation can be mitigated by shrinking the device to the nanoscale and controlling the voltage polarity. The authors also propose a method to eliminate the electroforming process by engineering the device structure to favor interface-controlled electronic switching over bulk oxide effects. This understanding provides new control and repeatability, promising improved engineering of switches for future nanoscale integrated circuits.