The mechanism of electroforming of metal oxide memristive switches is discussed, focusing on the role of oxygen vacancies and ion movement in oxide materials. Metal and semiconductor oxides are common electronic materials that can change behavior under high electric fields through electroforming or breakdown, affecting devices like CMOS, DRAM, and flash memory. Electroforming is an irreversible process that creates conductive channels in oxides, enabling resistance switching. However, this process can cause physical deformation and gas eruption, limiting device reliability and repeatability. The study explains electroforming as an electro-reduction process that creates oxygen vacancies, which drift towards the cathode, forming conducting channels. Simultaneously, oxygen ions drift towards the anode, evolving O₂ gas and causing physical deformation. By shrinking the junction to the nanoscale and controlling voltage polarity, these issues can be mitigated. The study also shows that electroforming can be eliminated by engineering the device structure to remove bulk oxide effects, favoring interface-controlled switching. The results demonstrate that electroforming is primarily a process of creating conductance channels across the bulk oxide film, and that the switching polarity is determined by the asymmetry of the interfaces. The study concludes that by reducing the oxide layer to a very thin layer, the need for electroforming can be eliminated, leading to more reliable and repeatable devices. The findings have implications for the development of advanced computer memory and logic circuits, including non-volatile random access memory (NVRAM) and adaptive neuromorphic circuits.The mechanism of electroforming of metal oxide memristive switches is discussed, focusing on the role of oxygen vacancies and ion movement in oxide materials. Metal and semiconductor oxides are common electronic materials that can change behavior under high electric fields through electroforming or breakdown, affecting devices like CMOS, DRAM, and flash memory. Electroforming is an irreversible process that creates conductive channels in oxides, enabling resistance switching. However, this process can cause physical deformation and gas eruption, limiting device reliability and repeatability. The study explains electroforming as an electro-reduction process that creates oxygen vacancies, which drift towards the cathode, forming conducting channels. Simultaneously, oxygen ions drift towards the anode, evolving O₂ gas and causing physical deformation. By shrinking the junction to the nanoscale and controlling voltage polarity, these issues can be mitigated. The study also shows that electroforming can be eliminated by engineering the device structure to remove bulk oxide effects, favoring interface-controlled switching. The results demonstrate that electroforming is primarily a process of creating conductance channels across the bulk oxide film, and that the switching polarity is determined by the asymmetry of the interfaces. The study concludes that by reducing the oxide layer to a very thin layer, the need for electroforming can be eliminated, leading to more reliable and repeatable devices. The findings have implications for the development of advanced computer memory and logic circuits, including non-volatile random access memory (NVRAM) and adaptive neuromorphic circuits.