The article "The Renaissance of Black Phosphorus" by Xi Ling, Han Wang, Shengxi Huang, Fengnian Xia, and Mildred Dresselhaus reviews the recent resurgence of interest in black phosphorus (BP) as a two-dimensional (2D) layered material. After being synthesized in bulk form over a century ago, BP has gained attention from condensed matter physicists, chemists, semiconductor device engineers, and material scientists due to its unique properties. Similar to graphite and transition metal dichalcogenides (TMDs), BP has a layered structure but with a puckered single-layer geometry. Its direct electronic band gap can vary from 0.3 to around 2 eV depending on its thickness, and it exhibits high carrier mobility and anisotropic in-plane properties, making it promising for novel applications in nanoelectronics and nanophotonics. The authors discuss the recent surge of research on BP, highlighting its potential in optoelectronics, thermoelectrics, and gas sensing. They also explore the unique in-plane anisotropy of BP, which can be exploited for developing new electronic and photonic devices. The article covers the material's synthesis methods, stability issues, and future research directions, emphasizing the need for large-scale synthesis techniques and effective passivation methods to overcome degradation problems. The authors conclude by discussing the potential of BP in high-speed flexible electronics and optoelectronic devices, particularly in the mid- and near-infrared spectrum ranges.The article "The Renaissance of Black Phosphorus" by Xi Ling, Han Wang, Shengxi Huang, Fengnian Xia, and Mildred Dresselhaus reviews the recent resurgence of interest in black phosphorus (BP) as a two-dimensional (2D) layered material. After being synthesized in bulk form over a century ago, BP has gained attention from condensed matter physicists, chemists, semiconductor device engineers, and material scientists due to its unique properties. Similar to graphite and transition metal dichalcogenides (TMDs), BP has a layered structure but with a puckered single-layer geometry. Its direct electronic band gap can vary from 0.3 to around 2 eV depending on its thickness, and it exhibits high carrier mobility and anisotropic in-plane properties, making it promising for novel applications in nanoelectronics and nanophotonics. The authors discuss the recent surge of research on BP, highlighting its potential in optoelectronics, thermoelectrics, and gas sensing. They also explore the unique in-plane anisotropy of BP, which can be exploited for developing new electronic and photonic devices. The article covers the material's synthesis methods, stability issues, and future research directions, emphasizing the need for large-scale synthesis techniques and effective passivation methods to overcome degradation problems. The authors conclude by discussing the potential of BP in high-speed flexible electronics and optoelectronic devices, particularly in the mid- and near-infrared spectrum ranges.