This article presents a method for manufacturing three-dimensional (3D) integrated metal-oxide transistors (TFTs) at room temperature using established materials and processes. The study reports the monolithic 3D integration of indium oxide (In₂O₃) TFTs on a silicon/silicon dioxide (Si/SiO₂) substrate, with ten n-channel In₂O₃ TFTs stacked in various architectures, including bottom-gate (BG), top-gate (TG), and dual-gate (DG) configurations. The DG devices exhibit enhanced electrical performance, with a maximum field-effect mobility of 15 cm² V⁻¹ s⁻¹, a subthreshold swing of 0.4 V dec⁻¹, and a current on/off ratio of 10⁸. These devices were used to create unipolar inverter circuits with a signal gain of around 50 and wide noise margins. The DG devices also allow fine-tuning of the inverters to achieve symmetric voltage-transfer characteristics and optimal noise margins. The study addresses the challenges of integrating 3D TFTs with scalable processes, which is essential for developing high-density, energy-efficient, and low-cost integrated circuits. The proposed method uses a low-thermal-budget approach, compatible with complementary metal–oxide–semiconductor (CMOS) processes, to fabricate In₂O₃ TFTs on Si/SiO₂ substrates. The 10-S configuration consists of ten sequentially processed stacks with 72 functional layers, including a base Si substrate, an SiO₂ insulation layer, 30 metal electrode layers, ten In₂O₃ channels, and 30 parylene-C layers. The devices were characterized for their electrical performance, with results showing good reproducibility and reliability across the vertically integrated 10-S system. The study also demonstrates the potential of the 10-S system for creating configurable logic invertors with tunable operating characteristics and signal gains of up to 50 V/V. The results highlight the scalability and strong performance of the 3D monolithic vertical integration approach, providing a potential route to cheaper and highly scalable large-area electronics. The article concludes that the DG architecture offers advantages in terms of speed, power dissipation, and noise immunity compared to conventional single-gate transistors. The study also discusses the potential for further tuning of the device geometry and inverter circuitry to enhance performance. The results show the special capability of the double-gate architecture to precisely adjust the operating characteristics of the transistors and the ensuing logic circuits.This article presents a method for manufacturing three-dimensional (3D) integrated metal-oxide transistors (TFTs) at room temperature using established materials and processes. The study reports the monolithic 3D integration of indium oxide (In₂O₃) TFTs on a silicon/silicon dioxide (Si/SiO₂) substrate, with ten n-channel In₂O₃ TFTs stacked in various architectures, including bottom-gate (BG), top-gate (TG), and dual-gate (DG) configurations. The DG devices exhibit enhanced electrical performance, with a maximum field-effect mobility of 15 cm² V⁻¹ s⁻¹, a subthreshold swing of 0.4 V dec⁻¹, and a current on/off ratio of 10⁸. These devices were used to create unipolar inverter circuits with a signal gain of around 50 and wide noise margins. The DG devices also allow fine-tuning of the inverters to achieve symmetric voltage-transfer characteristics and optimal noise margins. The study addresses the challenges of integrating 3D TFTs with scalable processes, which is essential for developing high-density, energy-efficient, and low-cost integrated circuits. The proposed method uses a low-thermal-budget approach, compatible with complementary metal–oxide–semiconductor (CMOS) processes, to fabricate In₂O₃ TFTs on Si/SiO₂ substrates. The 10-S configuration consists of ten sequentially processed stacks with 72 functional layers, including a base Si substrate, an SiO₂ insulation layer, 30 metal electrode layers, ten In₂O₃ channels, and 30 parylene-C layers. The devices were characterized for their electrical performance, with results showing good reproducibility and reliability across the vertically integrated 10-S system. The study also demonstrates the potential of the 10-S system for creating configurable logic invertors with tunable operating characteristics and signal gains of up to 50 V/V. The results highlight the scalability and strong performance of the 3D monolithic vertical integration approach, providing a potential route to cheaper and highly scalable large-area electronics. The article concludes that the DG architecture offers advantages in terms of speed, power dissipation, and noise immunity compared to conventional single-gate transistors. The study also discusses the potential for further tuning of the device geometry and inverter circuitry to enhance performance. The results show the special capability of the double-gate architecture to precisely adjust the operating characteristics of the transistors and the ensuing logic circuits.