Tin-doped indium oxide (ITO) films are highly transparent in the visible region, exhibit high reflectance in the infrared region, and have nearly metallic conductivity. These properties make ITO suitable for optoelectronic devices. The article discusses the electrical properties of ITO films, focusing on conduction mechanisms and parameters controlling conductivity. It compares the electrical properties of ITO films prepared by various techniques, including evaporation, sputtering, and chemical vapor deposition. The conduction mechanism in ITO films is influenced by the oxidation state of the metal component, impurities, and the nature of the dopant. Tin doping introduces electrons into the conduction band, leading to n-type conduction. However, the actual carrier concentration may be lower than expected due to the inactivity of some tin ions. The electrical properties of ITO films are strongly dependent on the preparation method, with variations in band gap values and dopant concentrations observed. The article also discusses the effects of grain boundaries, crystallographic orientation, and impurity scattering on the mobility and conductivity of ITO films. The optimal carrier concentration and mobility are interdependent, and the lowest possible resistivity is achieved through a balance between these factors. The article concludes that the electrical properties of ITO films are significantly influenced by the deposition method, with different techniques yielding varying results in terms of resistivity, mobility, and carrier concentration. The study highlights the importance of controlling the deposition parameters, such as oxygen partial pressure, substrate temperature, and film thickness, to achieve optimal electrical properties in ITO films.Tin-doped indium oxide (ITO) films are highly transparent in the visible region, exhibit high reflectance in the infrared region, and have nearly metallic conductivity. These properties make ITO suitable for optoelectronic devices. The article discusses the electrical properties of ITO films, focusing on conduction mechanisms and parameters controlling conductivity. It compares the electrical properties of ITO films prepared by various techniques, including evaporation, sputtering, and chemical vapor deposition. The conduction mechanism in ITO films is influenced by the oxidation state of the metal component, impurities, and the nature of the dopant. Tin doping introduces electrons into the conduction band, leading to n-type conduction. However, the actual carrier concentration may be lower than expected due to the inactivity of some tin ions. The electrical properties of ITO films are strongly dependent on the preparation method, with variations in band gap values and dopant concentrations observed. The article also discusses the effects of grain boundaries, crystallographic orientation, and impurity scattering on the mobility and conductivity of ITO films. The optimal carrier concentration and mobility are interdependent, and the lowest possible resistivity is achieved through a balance between these factors. The article concludes that the electrical properties of ITO films are significantly influenced by the deposition method, with different techniques yielding varying results in terms of resistivity, mobility, and carrier concentration. The study highlights the importance of controlling the deposition parameters, such as oxygen partial pressure, substrate temperature, and film thickness, to achieve optimal electrical properties in ITO films.