The article discusses the electrical properties of tin-doped indium oxide (ITO) films, which are widely used in optoelectronic devices due to their high transparency in the visible region, high reflectance in the infrared region, and metallic conductivity. The authors focus on the conduction mechanism and the parameters controlling conductivity, such as carrier concentration and mobility. They highlight the interdependence of different properties in ITO films and the impact of various fabrication techniques on their electrical characteristics. The conduction mechanism is primarily attributed to oxygen vacancies acting as donors and providing electron mobility. The article also explores the effects of doping concentration, carrier mobility, and impurity scattering on the electrical properties of ITO films. Additionally, it examines the influence of deposition methods, such as evaporation and sputtering, on the film properties, including oxygen partial pressure, film thickness, substrate temperature, and target quality. The study concludes with a discussion on the advantages and limitations of different deposition techniques and the importance of substrate temperature in achieving optimal electrical properties.The article discusses the electrical properties of tin-doped indium oxide (ITO) films, which are widely used in optoelectronic devices due to their high transparency in the visible region, high reflectance in the infrared region, and metallic conductivity. The authors focus on the conduction mechanism and the parameters controlling conductivity, such as carrier concentration and mobility. They highlight the interdependence of different properties in ITO films and the impact of various fabrication techniques on their electrical characteristics. The conduction mechanism is primarily attributed to oxygen vacancies acting as donors and providing electron mobility. The article also explores the effects of doping concentration, carrier mobility, and impurity scattering on the electrical properties of ITO films. Additionally, it examines the influence of deposition methods, such as evaporation and sputtering, on the film properties, including oxygen partial pressure, film thickness, substrate temperature, and target quality. The study concludes with a discussion on the advantages and limitations of different deposition techniques and the importance of substrate temperature in achieving optimal electrical properties.