This study explores the topology-engineered orbital Hall effect (OHE) in two-dimensional (2D) ferromagnets. By leveraging topological phase transitions (TPTs), the researchers demonstrate that the OHE can be effectively controlled through band inversion, which alters the orbital angular momentum (OAM) distribution. Using first-principles calculations, they identify Janus RuBrCl and three septuple layers of MnBi₂Te₄ as experimentally feasible materials for this mechanism. The OHE is shown to be sensitive to the topological properties of the system, with the orbital Hall conductivity (OHC) changing significantly upon TPTs. The study highlights the potential of topological engineering to manipulate the OHE, offering new possibilities for applications in topological spintronics and orbitronics. The research also reveals that the OHE can be controlled by the nature of the band inversion, which influences the orbital Berry curvature and the overall OHC. The findings suggest that the proposed strategy can be applied to other topological magnetic materials with non-zero OAM, opening up new avenues for the development of innovative electronic devices. The study emphasizes the importance of understanding the interplay between topology and orbital properties in 2D materials, paving the way for future advancements in this field.This study explores the topology-engineered orbital Hall effect (OHE) in two-dimensional (2D) ferromagnets. By leveraging topological phase transitions (TPTs), the researchers demonstrate that the OHE can be effectively controlled through band inversion, which alters the orbital angular momentum (OAM) distribution. Using first-principles calculations, they identify Janus RuBrCl and three septuple layers of MnBi₂Te₄ as experimentally feasible materials for this mechanism. The OHE is shown to be sensitive to the topological properties of the system, with the orbital Hall conductivity (OHC) changing significantly upon TPTs. The study highlights the potential of topological engineering to manipulate the OHE, offering new possibilities for applications in topological spintronics and orbitronics. The research also reveals that the OHE can be controlled by the nature of the band inversion, which influences the orbital Berry curvature and the overall OHC. The findings suggest that the proposed strategy can be applied to other topological magnetic materials with non-zero OAM, opening up new avenues for the development of innovative electronic devices. The study emphasizes the importance of understanding the interplay between topology and orbital properties in 2D materials, paving the way for future advancements in this field.