The paper presents a method for the atmospheric pressure graphitization of SiC(0001) to produce wafer-sized monolayer graphene films. The authors demonstrate that ex-situ graphitization of Si-terminated SiC(0001) in an argon atmosphere at about 1 bar pressure results in monolayer graphene films with larger domain sizes compared to previously attainable sizes. Hall measurements confirm the high quality of the films, with high electronic mobilities of up to 2000 cm²/Vs at 27 K. The method addresses the limitations of vacuum decomposition of SiC, which yields small-grain samples, and exfoliation from graphite, which produces isolated samples unsuitable for large-scale device production. The improved film quality is attributed to the higher annealing temperature and the presence of argon, which reduces silicon evaporation and enhances surface diffusion, leading to a smoother morphology and better thickness control. The technique is closer to standard semiconductor manufacturing conditions, making it suitable for large-scale production.The paper presents a method for the atmospheric pressure graphitization of SiC(0001) to produce wafer-sized monolayer graphene films. The authors demonstrate that ex-situ graphitization of Si-terminated SiC(0001) in an argon atmosphere at about 1 bar pressure results in monolayer graphene films with larger domain sizes compared to previously attainable sizes. Hall measurements confirm the high quality of the films, with high electronic mobilities of up to 2000 cm²/Vs at 27 K. The method addresses the limitations of vacuum decomposition of SiC, which yields small-grain samples, and exfoliation from graphite, which produces isolated samples unsuitable for large-scale device production. The improved film quality is attributed to the higher annealing temperature and the presence of argon, which reduces silicon evaporation and enhances surface diffusion, leading to a smoother morphology and better thickness control. The technique is closer to standard semiconductor manufacturing conditions, making it suitable for large-scale production.