This review discusses the potential of two-dimensional materials (2DMs) in the post-silicon era for transistor engineering. Traditional metal–oxide–semiconductor field-effect transistors (MOSFETs) face challenges in scaling below 10 nm due to the short-channel effect. 2DMs, with their atomic-scale thickness and non-dangling bonds, offer a promising solution for advanced technology nodes beyond sub-3 nm. While 2DMs have shown performance metrics comparable to silicon, the transition from lab to fab remains unclear. The review analyzes similarities and differences between 2DMs and silicon MOSFETs in integrated circuit engineering, focusing on channel, contact, and dielectric engineering to address scaling challenges. It highlights the need for large-scale and stable transfer technology, high-quality material synthesis, and controllable layers for successful integration. The review also discusses challenges in translating 2DM device performance into large-scale integrated circuits, including manufacturing processes, transfer techniques, and material synthesis. It emphasizes the importance of contact engineering for ultra-thin channels, with strategies such as silicide formation, low-resistance contacts, and semimetal contacts to reduce contact resistance. Dielectric engineering for 2DM–insulator interfaces is also discussed, with strategies like van der Waals stacking, seed-layer inducing, and in situ oxidation to improve interface quality. The review concludes that while 2DMs show great potential for future transistor scaling, challenges remain in achieving large-scale integration, including the need for improved thermal stability, interface quality, and transfer techniques. The review also highlights the importance of developing compatible technologies for 2DMs to enable their integration into existing semiconductor manufacturing processes.This review discusses the potential of two-dimensional materials (2DMs) in the post-silicon era for transistor engineering. Traditional metal–oxide–semiconductor field-effect transistors (MOSFETs) face challenges in scaling below 10 nm due to the short-channel effect. 2DMs, with their atomic-scale thickness and non-dangling bonds, offer a promising solution for advanced technology nodes beyond sub-3 nm. While 2DMs have shown performance metrics comparable to silicon, the transition from lab to fab remains unclear. The review analyzes similarities and differences between 2DMs and silicon MOSFETs in integrated circuit engineering, focusing on channel, contact, and dielectric engineering to address scaling challenges. It highlights the need for large-scale and stable transfer technology, high-quality material synthesis, and controllable layers for successful integration. The review also discusses challenges in translating 2DM device performance into large-scale integrated circuits, including manufacturing processes, transfer techniques, and material synthesis. It emphasizes the importance of contact engineering for ultra-thin channels, with strategies such as silicide formation, low-resistance contacts, and semimetal contacts to reduce contact resistance. Dielectric engineering for 2DM–insulator interfaces is also discussed, with strategies like van der Waals stacking, seed-layer inducing, and in situ oxidation to improve interface quality. The review concludes that while 2DMs show great potential for future transistor scaling, challenges remain in achieving large-scale integration, including the need for improved thermal stability, interface quality, and transfer techniques. The review also highlights the importance of developing compatible technologies for 2DMs to enable their integration into existing semiconductor manufacturing processes.