This study explores the switching behavior of sliding ferroelectricity in tunnel junctions using scanning probe microscopy and tunnelling transport measurements. The researchers observed well-pronounced ambipolar switching behavior in ferroelectric tunnel junctions with composite ferroelectric/non-polar insulator barriers. They found that the switching behavior is strongly influenced by the underlying domain structure, allowing the fabrication of diverse ferroelectric tunneling junction devices with various functionalities. The study also revealed that to observe polarization reversal, at least one partial dislocation must be present in the device area, which is significantly different from conventional ferroelectric materials. The findings highlight the importance of understanding the switching behavior of sliding ferroelectricity for the development of optoelectronic devices based on this phenomenon.This study explores the switching behavior of sliding ferroelectricity in tunnel junctions using scanning probe microscopy and tunnelling transport measurements. The researchers observed well-pronounced ambipolar switching behavior in ferroelectric tunnel junctions with composite ferroelectric/non-polar insulator barriers. They found that the switching behavior is strongly influenced by the underlying domain structure, allowing the fabrication of diverse ferroelectric tunneling junction devices with various functionalities. The study also revealed that to observe polarization reversal, at least one partial dislocation must be present in the device area, which is significantly different from conventional ferroelectric materials. The findings highlight the importance of understanding the switching behavior of sliding ferroelectricity for the development of optoelectronic devices based on this phenomenon.