The paper introduces a universal methodology for generating and manipulating altermagnetism in two-dimensional (2D) magnetic van der Waals (MvdW) materials through twisting. The key in-plane 2-fold rotational operation, achieved in a twisted bilayer of any 2D MvdW material, induces altermagnetism. By selecting MvdW monolayers with specific symmetries, the approach can tailor various types of altermagnetism, such as $d$-wave, $q$-wave, and $i$-wave. The properties of these twisted altermagnetic materials can be engineered by adjusting the twist angle, strain, and electric field. Using VOB$\mathrm{Br}$ as an example, the authors demonstrate that by tuning the twist angle and Fermi level, a giant spin Hall angle can be achieved, significantly exceeding experimental reports. This approach establishes a robust and adjustable platform for exploring altermagnetism and generating spin current efficiently. The method is applicable to a wide range of MvdW materials with interlayer antiferromagnetic order, offering rich possibilities for research and potential applications in spintronic devices and memory storage.The paper introduces a universal methodology for generating and manipulating altermagnetism in two-dimensional (2D) magnetic van der Waals (MvdW) materials through twisting. The key in-plane 2-fold rotational operation, achieved in a twisted bilayer of any 2D MvdW material, induces altermagnetism. By selecting MvdW monolayers with specific symmetries, the approach can tailor various types of altermagnetism, such as $d$-wave, $q$-wave, and $i$-wave. The properties of these twisted altermagnetic materials can be engineered by adjusting the twist angle, strain, and electric field. Using VOB$\mathrm{Br}$ as an example, the authors demonstrate that by tuning the twist angle and Fermi level, a giant spin Hall angle can be achieved, significantly exceeding experimental reports. This approach establishes a robust and adjustable platform for exploring altermagnetism and generating spin current efficiently. The method is applicable to a wide range of MvdW materials with interlayer antiferromagnetic order, offering rich possibilities for research and potential applications in spintronic devices and memory storage.