A universal method for generating and manipulating alternagnetism in two-dimensional (2D) magnetic van der Waals (MvdW) materials through twisting is introduced. By stacking MvdW monolayers with specific symmetry and applying a key in-plane 2-fold rotation, alternagnetism can be induced. This approach allows for the generation of various types of alternagnetism, including d-wave, g-wave, and i-wave, and is robust and tunable. The properties of the twisted alternagnetic materials can be engineered by adjusting the twist angle, strain, and electric field. For example, in VOBr, a giant spin Hall angle (SHA) of 1.4 is achieved by tuning the twist angle and Fermi level, which is much larger than previously reported. This method provides a flexible and ideal platform for exploring alternagnetism, enabling efficient spin current generation. The approach is applicable to various MvdW materials with interlayer antiferromagnetic order, and the physical properties of the twisted systems can be controlled through twist angle, doping, and other parameters. The study demonstrates that alternagnetism can be realized in different Bravais lattices, leading to distinct spin splitting patterns. The method is supported by tight-binding models and density-functional theory calculations, showing its universality and tunability. The results highlight the potential of twisted MvdW materials for spintronics and memory applications.A universal method for generating and manipulating alternagnetism in two-dimensional (2D) magnetic van der Waals (MvdW) materials through twisting is introduced. By stacking MvdW monolayers with specific symmetry and applying a key in-plane 2-fold rotation, alternagnetism can be induced. This approach allows for the generation of various types of alternagnetism, including d-wave, g-wave, and i-wave, and is robust and tunable. The properties of the twisted alternagnetic materials can be engineered by adjusting the twist angle, strain, and electric field. For example, in VOBr, a giant spin Hall angle (SHA) of 1.4 is achieved by tuning the twist angle and Fermi level, which is much larger than previously reported. This method provides a flexible and ideal platform for exploring alternagnetism, enabling efficient spin current generation. The approach is applicable to various MvdW materials with interlayer antiferromagnetic order, and the physical properties of the twisted systems can be controlled through twist angle, doping, and other parameters. The study demonstrates that alternagnetism can be realized in different Bravais lattices, leading to distinct spin splitting patterns. The method is supported by tight-binding models and density-functional theory calculations, showing its universality and tunability. The results highlight the potential of twisted MvdW materials for spintronics and memory applications.