This study investigates the mechanism of strain-induced stacking order change in trilayer graphene (TLG), focusing on the transition from ABA to ABC stacking. The research demonstrates a universal method to achieve ABC stacking through strain engineering, which induces interlayer slippage and results in stable ABC domains. Using computational simulations and experiments, the study reveals that interlayer slippage facilitates a highly anisotropic and significant transformation of ABA stacking to large and stable ABC domains. The mechanism is dependent on specific loading orientations, and understanding this allows for the design of materials compatible with industrial techniques. Raman studies validate the formation of ABC stacking, highlighting its distinct features compared to ABA regions. The results contribute to a clearer understanding of the stacking change mechanism and provide a robust and controllable method for achieving stable ABC domains, facilitating their use in developing advanced optoelectronic devices. The study also explores the stability of ABC configurations and the influence of loading orientations on stacking transitions. Experimental characterizations using Raman spectroscopy confirm the stacking order changes, demonstrating the effectiveness of the strain engineering approach in achieving stable ABC stacking. The findings highlight the anisotropic nature of stacking changes and the importance of loading orientation in influencing structural alignment and deformation. The results underscore the potential of strain engineering in controlling stacking order in TLG for advanced applications.This study investigates the mechanism of strain-induced stacking order change in trilayer graphene (TLG), focusing on the transition from ABA to ABC stacking. The research demonstrates a universal method to achieve ABC stacking through strain engineering, which induces interlayer slippage and results in stable ABC domains. Using computational simulations and experiments, the study reveals that interlayer slippage facilitates a highly anisotropic and significant transformation of ABA stacking to large and stable ABC domains. The mechanism is dependent on specific loading orientations, and understanding this allows for the design of materials compatible with industrial techniques. Raman studies validate the formation of ABC stacking, highlighting its distinct features compared to ABA regions. The results contribute to a clearer understanding of the stacking change mechanism and provide a robust and controllable method for achieving stable ABC domains, facilitating their use in developing advanced optoelectronic devices. The study also explores the stability of ABC configurations and the influence of loading orientations on stacking transitions. Experimental characterizations using Raman spectroscopy confirm the stacking order changes, demonstrating the effectiveness of the strain engineering approach in achieving stable ABC stacking. The findings highlight the anisotropic nature of stacking changes and the importance of loading orientation in influencing structural alignment and deformation. The results underscore the potential of strain engineering in controlling stacking order in TLG for advanced applications.