The paper presents an 8 × 8 vacuum-ultraviolet (VUV, 10–200 nm) photodetector array (PD) based on wide bandgap semiconductors (WBGs), specifically aluminum nitride (AlN). This PD array exhibits the shortest cutoff wavelength (203 nm) reported to date and features an ultra-wide bandgap, making it suitable for unfiltered VUV detection. The PD array, with a Pt/AlN/SiC/Ti/Au photovoltaic structure, shows excellent selective response to VUV light, an extremely low dark current density of 2.85 × 10−11 A cm−2 at -2 V, a responsivity of 0.054 A W−1 at 0 V, and an ultra-short rise time of 13 ns. The clear boundaries and contrast in the VUV images indicate good imaging ability, suitable for high signal-to-noise ratio and fast response applications. The fabrication process involves multi-step lithography without etching, enhancing efficiency and accuracy. The PD array's performance is compared with other VUV PD arrays, showing superior characteristics in terms of cutoff wavelength, dark current density, and rise time. The study provides valuable experience for the development of VUV imaging PDs based on WBGs, particularly for solar storm monitoring.The paper presents an 8 × 8 vacuum-ultraviolet (VUV, 10–200 nm) photodetector array (PD) based on wide bandgap semiconductors (WBGs), specifically aluminum nitride (AlN). This PD array exhibits the shortest cutoff wavelength (203 nm) reported to date and features an ultra-wide bandgap, making it suitable for unfiltered VUV detection. The PD array, with a Pt/AlN/SiC/Ti/Au photovoltaic structure, shows excellent selective response to VUV light, an extremely low dark current density of 2.85 × 10−11 A cm−2 at -2 V, a responsivity of 0.054 A W−1 at 0 V, and an ultra-short rise time of 13 ns. The clear boundaries and contrast in the VUV images indicate good imaging ability, suitable for high signal-to-noise ratio and fast response applications. The fabrication process involves multi-step lithography without etching, enhancing efficiency and accuracy. The PD array's performance is compared with other VUV PD arrays, showing superior characteristics in terms of cutoff wavelength, dark current density, and rise time. The study provides valuable experience for the development of VUV imaging PDs based on WBGs, particularly for solar storm monitoring.