This study presents an 8×8 vacuum-ultraviolet (VUV, 10–200 nm) photodetector (PD) array based on aluminum nitride (AlN), a wide bandgap semiconductor (WBGS), which exhibits the shortest cutoff wavelength (203 nm) reported so far. The PD array, with a Pt/AlN/SiC/Ti/Au photovoltaic structure, demonstrates excellent selectivity to VUV light, an extremely low dark current density of 2.85×10⁻¹¹ A·cm⁻² at -2 V, a responsivity of 0.054×10⁻¹ V, and an ultra-short rise time of 13 ns. The PD array shows clear boundaries and high contrast between light and dark in VUV imaging, indicating its good imaging ability. These results provide valuable experience for the development of VUV imaging PDs based on WBGSs in both fabrication and practical applications. The PD array is fabricated using a multi-step lithography process without etching, which improves fabrication efficiency and accuracy. The AlN film has an ultra-wide direct bandgap of 6.2 eV, making it suitable for unfiltered VUV detection. The PD array has a high open circuit voltage (1.9 V) and operates without external bias. The device has a high signal-to-noise ratio and fast response speed, making it suitable for high-speed imaging applications. The PD array also shows uniform photoelectric performance across all pixels, with a mean photocurrent of 111 nA and a standard deviation of 9.9%. The VUV imaging results show clear boundaries and high similarity to the actual image, indicating the PD array's high fidelity. The PD array has a cutoff wavelength of 203 nm, indicating good selectivity to VUV light. The device has a high specific detectivity (2.2×10¹³ Jones) due to its ultra-low dark current density. The PD array has a short rise time (13 ns) and good noise performance, with noise power density lower than 10⁻²⁵ A²·Hz⁻¹ at 0 V. The PD array has a high response uniformity, with no bad spots and even distribution of photocurrent. The PD array has a high responsivity (0.054 A·W⁻¹) and external quantum efficiency (34.2%) at 197 nm. The PD array has a high potential for practical applications in VUV detection, especially for solar storm monitoring. This work is expected to promote the practical applications of VUV imaging PDs based on WBGSs.This study presents an 8×8 vacuum-ultraviolet (VUV, 10–200 nm) photodetector (PD) array based on aluminum nitride (AlN), a wide bandgap semiconductor (WBGS), which exhibits the shortest cutoff wavelength (203 nm) reported so far. The PD array, with a Pt/AlN/SiC/Ti/Au photovoltaic structure, demonstrates excellent selectivity to VUV light, an extremely low dark current density of 2.85×10⁻¹¹ A·cm⁻² at -2 V, a responsivity of 0.054×10⁻¹ V, and an ultra-short rise time of 13 ns. The PD array shows clear boundaries and high contrast between light and dark in VUV imaging, indicating its good imaging ability. These results provide valuable experience for the development of VUV imaging PDs based on WBGSs in both fabrication and practical applications. The PD array is fabricated using a multi-step lithography process without etching, which improves fabrication efficiency and accuracy. The AlN film has an ultra-wide direct bandgap of 6.2 eV, making it suitable for unfiltered VUV detection. The PD array has a high open circuit voltage (1.9 V) and operates without external bias. The device has a high signal-to-noise ratio and fast response speed, making it suitable for high-speed imaging applications. The PD array also shows uniform photoelectric performance across all pixels, with a mean photocurrent of 111 nA and a standard deviation of 9.9%. The VUV imaging results show clear boundaries and high similarity to the actual image, indicating the PD array's high fidelity. The PD array has a cutoff wavelength of 203 nm, indicating good selectivity to VUV light. The device has a high specific detectivity (2.2×10¹³ Jones) due to its ultra-low dark current density. The PD array has a short rise time (13 ns) and good noise performance, with noise power density lower than 10⁻²⁵ A²·Hz⁻¹ at 0 V. The PD array has a high response uniformity, with no bad spots and even distribution of photocurrent. The PD array has a high responsivity (0.054 A·W⁻¹) and external quantum efficiency (34.2%) at 197 nm. The PD array has a high potential for practical applications in VUV detection, especially for solar storm monitoring. This work is expected to promote the practical applications of VUV imaging PDs based on WBGSs.