This study presents the development of silicon photonics (SiPh)-integrated twisted bilayer graphene (tBLG) photodetectors, which exhibit enhanced optical absorption and high photoresponsivity. The tBLG, with a twist angle of 4.1°, demonstrates a responsivity of 0.65 A W\(^{-1}\) at a telecom wavelength of 1,550 nm, enabling a 3-dB bandwidth of >65 GHz and a data stream rate of 50 Gbit s\(^{-1}\). This high performance is attributed to the enhanced optical absorption facilitated by van Hove singularities in the band structure of high-mobility tBLG. The uniform performance of tBLG photodetector arrays on large-scale integration with SiPh is demonstrated, showing high responsivities (0.46 ± 0.07 A W\(^{-1}\)) and high bandwidths (36 ± 2 GHz). The study highlights the potential of tBLG as a material for heterogeneous integration with SiPh, given the recent advancements in wafer-scale growth and transfer of tBLG to silicon substrates.This study presents the development of silicon photonics (SiPh)-integrated twisted bilayer graphene (tBLG) photodetectors, which exhibit enhanced optical absorption and high photoresponsivity. The tBLG, with a twist angle of 4.1°, demonstrates a responsivity of 0.65 A W\(^{-1}\) at a telecom wavelength of 1,550 nm, enabling a 3-dB bandwidth of >65 GHz and a data stream rate of 50 Gbit s\(^{-1}\). This high performance is attributed to the enhanced optical absorption facilitated by van Hove singularities in the band structure of high-mobility tBLG. The uniform performance of tBLG photodetector arrays on large-scale integration with SiPh is demonstrated, showing high responsivities (0.46 ± 0.07 A W\(^{-1}\)) and high bandwidths (36 ± 2 GHz). The study highlights the potential of tBLG as a material for heterogeneous integration with SiPh, given the recent advancements in wafer-scale growth and transfer of tBLG to silicon substrates.