This review explores the interfaces between two-dimensional (2D) materials and metals, highlighting their fundamental insights and potential applications. Historically, studies of 2D materials focused on dielectric substrates or suspended samples, but integrating metals in exfoliation and growth processes has revealed various interactions, from dispersive forces to covalent bonding. These interactions significantly affect the properties of 2D materials, particularly transition metal dichalcogenides (TMDCs), influencing (opto)electronics, Schottky barrier heights, and contact resistances. The review discusses metal-mediated exfoliation methods, elucidating their mechanisms and impacts on TMDC-metal interactions. It also examines the fundamentals of these interactions, focusing on MoS₂ and Au, and addresses controversies, such as changes in Raman or photoemission signatures of MoS₂ on Au. The interplay between charge redistribution, bond length variations, and interface charge transfer processes is analyzed. The review also explores the potential of TMDC phase transitions induced by strongly interacting substrates and their implications for contact design. The review emphasizes the importance of interface preparation, including exfoliation methods like direct mechanical exfoliation, template stripping, and metal-assisted exfoliation. Key factors affecting exfoliation include strain, surface conditions, oxidation, and roughness. The interaction between TMDCs and metals is complex, with varying binding energies and interaction types, ranging from weak van der Waals to covalent-like bonding. Characterization techniques such as photoemission spectroscopy, transmission electron microscopy, and Raman spectroscopy are used to study these interactions. The review also discusses the electronic and transport properties of TMDCs on metal surfaces, highlighting the effects of strong interactions on band structure and electronic properties. The role of interface states, Fermi level pinning, and Schottky barrier heights is analyzed, along with the impact of metal deposition techniques on defect formation and interface dipoles. The review concludes with the importance of understanding these interactions for the development of (opto)electronic devices and the design of efficient contacts.This review explores the interfaces between two-dimensional (2D) materials and metals, highlighting their fundamental insights and potential applications. Historically, studies of 2D materials focused on dielectric substrates or suspended samples, but integrating metals in exfoliation and growth processes has revealed various interactions, from dispersive forces to covalent bonding. These interactions significantly affect the properties of 2D materials, particularly transition metal dichalcogenides (TMDCs), influencing (opto)electronics, Schottky barrier heights, and contact resistances. The review discusses metal-mediated exfoliation methods, elucidating their mechanisms and impacts on TMDC-metal interactions. It also examines the fundamentals of these interactions, focusing on MoS₂ and Au, and addresses controversies, such as changes in Raman or photoemission signatures of MoS₂ on Au. The interplay between charge redistribution, bond length variations, and interface charge transfer processes is analyzed. The review also explores the potential of TMDC phase transitions induced by strongly interacting substrates and their implications for contact design. The review emphasizes the importance of interface preparation, including exfoliation methods like direct mechanical exfoliation, template stripping, and metal-assisted exfoliation. Key factors affecting exfoliation include strain, surface conditions, oxidation, and roughness. The interaction between TMDCs and metals is complex, with varying binding energies and interaction types, ranging from weak van der Waals to covalent-like bonding. Characterization techniques such as photoemission spectroscopy, transmission electron microscopy, and Raman spectroscopy are used to study these interactions. The review also discusses the electronic and transport properties of TMDCs on metal surfaces, highlighting the effects of strong interactions on band structure and electronic properties. The role of interface states, Fermi level pinning, and Schottky barrier heights is analyzed, along with the impact of metal deposition techniques on defect formation and interface dipoles. The review concludes with the importance of understanding these interactions for the development of (opto)electronic devices and the design of efficient contacts.