This review explores the intricate interfaces formed between two-dimensional (2D) materials and metals, particularly focusing on transition metal dichalcogenides (TMDCs) and gold (Au). The integration of metals in the exfoliation and growth processes of 2D materials has opened new avenues, revealing a range of interactions from dispersive forces to covalent bonding. These modifications in TMDCs, especially MoS₂, have significant implications for optoelectronics, altering Schottky barrier heights and contact resistances in devices. The review discusses metal-mediated methods for TMDC exfoliation, elucidating the mechanisms and their impact on TMDC-metal interactions. It delves into the fundamental aspects of these interactions, emphasizing the strong interaction between MoS₂ and Au, and the changes in Raman or photoemission signatures of MoS₂ on Au. The interplay between charge redistribution, substrate-induced bond length variations, and interface charge transfer processes is examined, along with the potential explanations for observed phenomena. The review also addresses the intriguing prospect of TMDC phase transitions induced by strongly interacting substrates and their implications for contact design. It highlights the importance of interface cleanliness, interfacial strain, and lack of surface oxidation for successful preparation of large-area 2D monolayers on metals. The strong interaction between TMDCs and metallic substrates significantly affects the physical properties of the system, detectable using various characterization techniques such as photoemission spectroscopy, transmission electron microscopy, and Raman spectroscopy. Finally, the review discusses the nature of interactions, electronic and transport properties, and the role of metal-induced gap states in the physics of the metal-semiconductor interface. It emphasizes the importance of understanding these interactions for the development of advanced optoelectronic devices.This review explores the intricate interfaces formed between two-dimensional (2D) materials and metals, particularly focusing on transition metal dichalcogenides (TMDCs) and gold (Au). The integration of metals in the exfoliation and growth processes of 2D materials has opened new avenues, revealing a range of interactions from dispersive forces to covalent bonding. These modifications in TMDCs, especially MoS₂, have significant implications for optoelectronics, altering Schottky barrier heights and contact resistances in devices. The review discusses metal-mediated methods for TMDC exfoliation, elucidating the mechanisms and their impact on TMDC-metal interactions. It delves into the fundamental aspects of these interactions, emphasizing the strong interaction between MoS₂ and Au, and the changes in Raman or photoemission signatures of MoS₂ on Au. The interplay between charge redistribution, substrate-induced bond length variations, and interface charge transfer processes is examined, along with the potential explanations for observed phenomena. The review also addresses the intriguing prospect of TMDC phase transitions induced by strongly interacting substrates and their implications for contact design. It highlights the importance of interface cleanliness, interfacial strain, and lack of surface oxidation for successful preparation of large-area 2D monolayers on metals. The strong interaction between TMDCs and metallic substrates significantly affects the physical properties of the system, detectable using various characterization techniques such as photoemission spectroscopy, transmission electron microscopy, and Raman spectroscopy. Finally, the review discusses the nature of interactions, electronic and transport properties, and the role of metal-induced gap states in the physics of the metal-semiconductor interface. It emphasizes the importance of understanding these interactions for the development of advanced optoelectronic devices.