This paper introduces a novel ZnO-Silicon (Si) and silver (Ag) layer-based surface plasmon resonance (SPR) sensor designed for chemical sensing. The sensor consists of an Ag layer sandwiched between a BaF₂ prism and a sensing layer containing analytes. Si is chosen for its high refractive index (RI), semiconducting nature, compatibility with microfabrication techniques, and biocompatibility, making it suitable for a wide range of applications. The Kretschmann configuration is used to analyze the SPR, and Sellmeier equations are employed to calculate reflectivity and other design parameters. The sensor demonstrates high sensitivity for sensing media with RIs of 1.3264 (D₂O), 1.35, and 1.36 (Acetone), achieving sensitivities of 201.8°/RIU, 257.85°/RIU, and 311°/RIU, respectively. The figure of merit (FOM) values are 60.54/RIU, 54.66/RIU, and 70.18/RIU, respectively. The ZnO layer's effect is compared with other prisms like CsF, NFK51A, and BK7, showing improved performance for RIs between 1.3264 and 1.36. The proposed sensor's effectiveness is enhanced by the combination of ZnO and Si, which are widely used in optoelectronic systems and have the potential to advance existing technologies.This paper introduces a novel ZnO-Silicon (Si) and silver (Ag) layer-based surface plasmon resonance (SPR) sensor designed for chemical sensing. The sensor consists of an Ag layer sandwiched between a BaF₂ prism and a sensing layer containing analytes. Si is chosen for its high refractive index (RI), semiconducting nature, compatibility with microfabrication techniques, and biocompatibility, making it suitable for a wide range of applications. The Kretschmann configuration is used to analyze the SPR, and Sellmeier equations are employed to calculate reflectivity and other design parameters. The sensor demonstrates high sensitivity for sensing media with RIs of 1.3264 (D₂O), 1.35, and 1.36 (Acetone), achieving sensitivities of 201.8°/RIU, 257.85°/RIU, and 311°/RIU, respectively. The figure of merit (FOM) values are 60.54/RIU, 54.66/RIU, and 70.18/RIU, respectively. The ZnO layer's effect is compared with other prisms like CsF, NFK51A, and BK7, showing improved performance for RIs between 1.3264 and 1.36. The proposed sensor's effectiveness is enhanced by the combination of ZnO and Si, which are widely used in optoelectronic systems and have the potential to advance existing technologies.